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MX29LV160TMC-70 PDF预览

MX29LV160TMC-70

更新时间： 2024-02-28 16:47:19
品牌 Logo 应用领域
旺宏电子 - Macronix 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
66页 1357K
描述
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

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中文翻译

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MX29LV160TMC-70 技术参数

生命周期：Obsolete零件包装代码：SOIC
包装说明：0.500 INCH, PLASTIC, MO-175, SOP-44针数：44
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.32.00.51风险等级：5.75
Is Samacsys：N最长访问时间：70 ns
其他特性：100000 MINIMUM ERASE/PROGRAM CYCLES备用内存宽度：8
启动块：TOP命令用户界面：YES
数据轮询：YESJESD-30 代码：R-PDSO-G44
JESD-609代码：e0长度：28.5 mm
内存密度：16777216 bit内存集成电路类型：FLASH
内存宽度：16功能数量：1
部门数/规模：1,2,1,31端子数量：44
字数：1048576 words字数代码：1000000
工作模式：ASYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：1MX16
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP44,.63封装形状：RECTANGULAR
封装形式：SMALL OUTLINE并行/串行：PARALLEL
电源：3/3.3 V编程电压：3 V
认证状态：Not Qualified座面最大高度：3 mm
部门规模：16K,8K,32K,64K最大待机电流：0.000005 A
子类别：Flash Memories最大压摆率：0.03 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子面层：TIN LEAD端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
切换位：YES类型：NOR TYPE
宽度：12.6 mmBase Number Matches：1

MX29LV160TMC-70 数据手册

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MX29LV160T/B & MX29LV160AT/AB  
16M-BIT[2Mx8/1Mx16]CMOSSINGLEVOLTAGE  
3VONLYFLASHMEMORY  
FEATURES  
• Ready/Busy pin (RY/BY)  
• Extended single - supply voltage range 2.7V to 3.6V  
• 2,097,152 x 8/1,048,576 x 16 switchable  
• Singlepowersupplyoperation  
- 3.0V only operation for read, erase and program  
operation  
• Fast access time: 70/90ns  
-Providesahardwaremethodofdetectingprogramor  
eraseoperationcompletion.  
• Sectorprotection  
- Hardware method to disable any combination of  
sectors from program or erase operations  
-Temporarysectorunprotectallowscodechangesin  
previously locked sectors.  
• Lowpowerconsumption  
- 30mA maximum active current  
• CFI (Common Flash Interface) compliant (for  
MX29LV160AT/AB)  
- 0.2uA typical standby current  
• Commandregisterarchitecture  
- Flash device parameters stored on the device and  
provide the host system to access  
• 100,000minimumerase/programcycles  
• Latch-up protected to 100mA from -1V to VCC+1V  
• Boot Sector Architecture  
- T = Top Boot Sector  
- B = Bottom Boot Sector  
• Low VCC write inhibit is equal to or less than 1.4V  
• Package type:  
- Byte/word Programming (9us/11us typical)  
- Sector Erase (Sector structure 16K-Bytex1,  
8K-Bytex2, 32K-Bytex1, and 64K-Byte x31)  
• Auto Erase (chip & sector) and Auto Program  
-Automaticallyeraseanycombinationofsectorswith  
Erase Suspend capability.  
- Automatically program and verify data at specified  
address  
• EraseSuspend/EraseResume  
- Suspends sector erase operation to read data from,  
orprogramdatato,any sectorthatisnotbeingerased,  
then resumes the erase.  
- 44-pin SOP  
- 48-pin TSOP  
-48-ballCSP(8x13mm:forMX29LV160T/B;6x8mm:  
forMX29LV160AT/AB)  
• Status Reply  
• Compatibility with JEDEC standard  
- Pinout and software compatible with single-power  
supply Flash  
-Datapolling&Togglebitfordetectionofprogramand  
eraseoperationcompletion.  
power supply levels during erase and programming, while  
maintaining maximum EPROM compatibility.  
GENERAL DESCRIPTION  
The MX29LV160T/B & MX29LV160AT/AB is a 16-mega  
bit Flash memory organized as 2M bytes of 8 bits or 1M  
words of 16 bits. MXIC's Flash memories offer the most  
cost-effective and reliable read/write non-volatile random  
access memory. The MX29LV160T/B & MX29LV160AT/  
AB is packaged in 44-pin SOP, 48-pinTSOP and 48-ball  
CSP. It is designed to be reprogrammed and erased in  
system or in standard EPROM programmers.  
MXIC Flash technology reliably stores memory contents  
even after 100,000 erase and program cycles. The MXIC  
cell is designed to optimize the erase and programming  
mechanisms. In addition, the combination of advanced  
tunnel oxide processing and low internal electric fields  
for erase and program operations produces reliable cy-  
cling. The MX29LV160T/B & MX29LV160AT/AB uses a  
2.7V~3.6V VCC supply to perform the High Reliability  
Erase and auto Program/Erase algorithms.  
The standard MX29LV160T/B & MX29LV160AT/AB of-  
fers access time as fast as 70ns, allowing operation of  
high-speed microprocessors without wait states. To elimi-  
nate bus contention, the MX29LV160T/B &  
MX29LV160AT/AB has separate chip enable (CE) and  
output enable (OE) controls.  
The highest degree of latch-up protection is achieved  
with MXIC's proprietary non-epi process. Latch-up pro-  
tection is proved for stresses up to 100 milliamps on  
address and data pin from -1V to VCC + 1V.  
Part Name  
MX29LV160T/B  
Difference  
1) Without CFI compliant  
2)CSP dimension:8x13mm  
MXIC's Flash memories augment EPROM functionality  
with in-circuit electrical erasure and programming. The  
MX29LV160T/B & MX29LV160AT/AB uses a command  
register to manage this functionality. The command reg-  
ister allows for 100% TTL level control inputs and fixed  
MX29LV160AT/AB 1) With CFI compliant  
2)CSP dimension:6x8mm  
P/N:PM0866  
REV. 3.7, APR. 23, 2003  
1
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