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MX29LV160CTXBC-90G PDF预览

MX29LV160CTXBC-90G

更新时间： 2024-02-23 02:47:27
品牌 Logo 应用领域
旺宏电子 - Macronix 闪存存储内存集成电路
页数 文件大小 规格书
66页 923K
描述
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

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中文翻译

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MX29LV160CTXBC-90G 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：BGA包装说明：TFBGA, BGA48,6X8,32
针数：48Reach Compliance Code：unknown
ECCN代码：3A991.B.1.AHTS代码：8542.32.00.51
风险等级：5.65Is Samacsys：N
最长访问时间：90 ns备用内存宽度：8
启动块：TOP命令用户界面：YES
通用闪存接口：YES数据轮询：YES
JESD-30 代码：R-PBGA-B48JESD-609代码：e1
长度：8 mm内存密度：268435456 bit
内存集成电路类型：FLASH内存宽度：16
湿度敏感等级：3功能数量：1
部门数/规模：1,2,1,31端子数量：48
字数：16777216 words字数代码：16000000
工作模式：ASYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：16MX16
封装主体材料：PLASTIC/EPOXY封装代码：TFBGA
封装等效代码：BGA48,6X8,32封装形状：RECTANGULAR
封装形式：GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行：PARALLEL
峰值回流温度（摄氏度）：260电源：3/3.3 V
编程电压：3 V认证状态：Not Qualified
就绪/忙碌：YES座面最大高度：1.2 mm
部门规模：16K,8K,32K,64K最大待机电流：0.000005 A
子类别：Flash Memories最大压摆率：0.03 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子面层：TIN SILVER COPPER端子形式：BALL
端子节距：0.8 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：40切换位：YES
类型：NOR TYPE宽度：6 mm
Base Number Matches：1

MX29LV160CTXBC-90G 数据手册

 浏览型号MX29LV160CTXBC-90G的Datasheet PDF文件第2页浏览型号MX29LV160CTXBC-90G的Datasheet PDF文件第3页浏览型号MX29LV160CTXBC-90G的Datasheet PDF文件第4页浏览型号MX29LV160CTXBC-90G的Datasheet PDF文件第5页浏览型号MX29LV160CTXBC-90G的Datasheet PDF文件第6页浏览型号MX29LV160CTXBC-90G的Datasheet PDF文件第7页 
MX29LV160C T/B  
16M-BIT[2Mx8/1Mx16]CMOSSINGLEVOLTAGE  
3VONLYFLASHMEMORY  
FEATURES  
• Ready/Busy# pin (RY/BY#)  
• Extended single - supply voltage range 2.7V to 3.6V  
• 2,097,152 x 8/1,048,576 x 16 switchable  
• Singlepowersupplyoperation  
-Providesahardwaremethodofdetectingprogramor  
eraseoperationcompletion.  
• Sectorprotection  
- 3.0V only operation for read, erase and program  
operation  
• Fully compatible with MX29LV160B device  
• Fast access time: 55R/70/90ns  
- Hardware method to disable any combination of  
sectors from program or erase operations  
-Temporarysectorunprotectallowscodechangesin  
previously locked sectors.  
• Lowpowerconsumption  
• CFI (Common Flash Interface) compliant  
- Flash device parameters stored on the device and  
provide the host system to access  
• 100,000minimumerase/programcycles  
• Latch-up protected to 100mA from -1V to VCC+1V  
• Boot Sector Architecture  
- T = Top Boot Sector  
- B = Bottom Boot Sector  
• Low VCC write inhibit is equal to or less than 1.4V  
• Package type:  
- 30mA maximum active current  
- 0.2uA typical standby current  
• Commandregisterarchitecture  
- Byte/word Programming (9us/11us typical)  
- Sector Erase (Sector structure 16K-Bytex1,  
8K-Bytex2, 32K-Bytex1, and 64K-Byte x31)  
• Auto Erase (chip & sector) and Auto Program  
-Automaticallyeraseanycombinationofsectorswith  
Erase Suspend capability.  
- Automatically program and verify data at specified  
address  
- 44-pin SOP  
- 48-pin TSOP  
• EraseSuspend/EraseResume  
- 48-ball CSP  
- Suspends sector erase operation to read data from,  
orprogramdatato,any sectorthatisnotbeingerased,  
then resumes the erase.  
- All Pb-free devices are RoHS Compliant  
• Compatibility with JEDEC standard  
- Pinout and software compatible with single-power  
supply Flash  
• Status Reply  
- Data# Polling & Toggle bit for detection of program  
anderaseoperationcompletion.  
• 10 years data retention  
GENERAL DESCRIPTION  
The MX29LV160C T/B is a 16-mega bit Flash memory  
organized as 2M bytes of 8 bits or 1M words of 16 bits.  
MXIC's Flash memories offer the most cost-effective  
and reliable read/write non-volatile random access  
memory. The MX29LV160C T/B is packaged in 44-pin  
SOP, 48-pinTSOP and 48-ball CSP. It is designed to be  
reprogrammed and erased in system or in standard  
EPROM programmers.  
TTL level control inputs and fixed power supply levels  
during erase and programming, while maintaining maxi-  
mum EPROM compatibility.  
MXIC Flash technology reliably stores memory contents  
even after 100,000 erase and program cycles. The MXIC  
cell is designed to optimize the erase and programming  
mechanisms. In addition, the combination of advanced  
tunnel oxide processing and low internal electric fields  
for erase and program operations produces reliable cy-  
cling. The MX29LV160C T/B uses a 2.7V~3.6V VCC  
supply to perform the High Reliability Erase and auto  
Program/Erase algorithms.  
The standard MX29LV160C T/B offers access time as  
fast as 55ns, allowing operation of high-speed micropro-  
cessors without wait states. To eliminate bus conten-  
tion, the MX29LV160C T/B has separate chip enable  
(CE#) and output enable (OE#) controls.  
The highest degree of latch-up protection is achieved  
with MXIC's proprietary non-epi process. Latch-up pro-  
tection is proved for stresses up to 100 milliamps on  
address and data pin from -1V to VCC + 1V.  
MXIC's Flash memories augment EPROM functionality  
with in-circuit electrical erasure and programming. The  
MX29LV160CT/B uses a command register to manage  
this functionality. The command register allows for 100%  
P/N:PM1186  
REV. 1.2, JAN. 19, 2006  
1
1234567...66

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