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MX29LV160BBXEC-55R PDF预览

MX29LV160BBXEC-55R

更新时间: 2024-09-20 21:20:35
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旺宏电子 - Macronix /
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60页 798K
描述
Flash Memory

MX29LV160BBXEC-55R 数据手册

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ADVANCED INFORMATION  
MX29LV160BT/BB  
16M-BIT[2Mx8/1Mx16]CMOSSINGLEVOLTAGE  
3VONLYFLASHMEMORY  
FEATURES  
eraseoperationcompletion.  
• Ready/Busy pin (RY/BY)  
-Providesahardwaremethodofdetectingprogramor  
eraseoperationcompletion.  
• Sectorprotection  
• Extended single - supply voltage range 2.7V to 3.6V  
• 2,097,152 x 8/1,048,576 x 16 switchable  
• Singlepowersupplyoperation  
- 3.0V only operation for read, erase and program  
operation  
- Hardware method to disable any combination of  
sectors from program or erase operations  
-Temporarysectorunprotectallowscodechangesin  
previously locked sectors.  
Fully compatible with MX29LV160A device  
• Fast access time: 55/70ns  
• Lowpowerconsumption  
- 30mA maximum active current  
• CFI (Common Flash Interface) compliant  
- Flash device parameters stored on the device and  
provide the host system to access  
• 100,000minimumerase/programcycles  
• Latch-up protected to 100mA from -1V to VCC+1V  
• Boot Sector Architecture  
- 0.2uA typical standby current  
• Commandregisterarchitecture  
- Byte/word Programming (9us/11us typical)  
- Sector Erase (Sector structure 16K-Bytex1,  
8K-Bytex2, 32K-Bytex1, and 64K-Byte x31)  
• Auto Erase (chip & sector) and Auto Program  
-Automaticallyeraseanycombinationofsectorswith  
Erase Suspend capability.  
- T = Top Boot Sector  
- B = Bottom Boot Sector  
• Low VCC write inhibit is equal to or less than 1.4V  
• Package type:  
- Automatically program and verify data at specified  
address  
• EraseSuspend/EraseResume  
- 44-pin SOP  
- 48-pin TSOP  
- 48-ball CSP  
- Suspends sector erase operation to read data from,  
orprogramdatato,any sectorthatisnotbeingerased,  
then resumes the erase.  
• Compatibility with JEDEC standard  
- Pinout and software compatible with single-power  
supply Flash  
• Status Reply  
-Datapolling&Togglebitfordetectionofprogramand  
GENERAL DESCRIPTION  
The MX29LV160BT/BB is a 16-mega bit Flash memory  
organized as 2M bytes of 8 bits or 1M words of 16 bits.  
MXIC's Flash memories offer the most cost-effective  
and reliable read/write non-volatile random access  
memory. The MX29LV160BT/BB is packaged in 44-pin  
SOP, 48-pinTSOP and 48-ball CSP. It is designed to be  
reprogrammed and erased in system or in standard  
EPROM programmers.  
100% TTL level control inputs and fixed power supply  
levels during erase and programming, while maintaining  
maximum EPROM compatibility.  
MXIC Flash technology reliably stores memory contents  
even after 100,000 erase and program cycles. The MXIC  
cell is designed to optimize the erase and programming  
mechanisms. In addition, the combination of advanced  
tunnel oxide processing and low internal electric fields  
for erase and program operations produces reliable cy-  
cling. The MX29LV160BT/BB uses a 2.7V~3.6V VCC  
supply to perform the High Reliability Erase and auto  
Program/Erase algorithms.  
The standard MX29LV160BT/BB offers access time as  
fast as 55ns, allowing operation of high-speed micropro-  
cessors without wait states. To eliminate bus conten-  
tion, the MX29LV160BT/BB has separate chip enable  
(CE) and output enable (OE) controls.  
The highest degree of latch-up protection is achieved  
with MXIC's proprietary non-epi process. Latch-up pro-  
tection is proved for stresses up to 100 milliamps on  
address and data pin from -1V to VCC + 1V.  
MXIC's Flash memories augment EPROM functionality  
with in-circuit electrical erasure and programming. The  
MX29LV160BT/BB uses a command register to man-  
age this functionality. The command register allows for  
P/N:PM1041  
REV. 0.0, NOV. 18, 2003  
1

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