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MX29LV002CTTC-90G PDF预览

MX29LV002CTTC-90G

更新时间： 2024-02-20 21:35:30
品牌 Logo 应用领域
旺宏电子 - Macronix 闪存存储内存集成电路光电二极管ISM频段
页数 文件大小 规格书
58页 513K
描述
2M-BIT [256K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

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MX29LV002CTTC-90G 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete包装说明：TSSOP, TSSOP32,.8,20
Reach Compliance Code：unknown风险等级：5.92
最长访问时间：90 ns启动块：TOP
命令用户界面：YES数据轮询：YES
耐久性：100000 Write/Erase CyclesJESD-30 代码：R-PDSO-G32
内存密度：2097152 bit内存集成电路类型：FLASH
内存宽度：8湿度敏感等级：1
部门数/规模：1,2,1,3端子数量：32
字数：262144 words字数代码：256000
最高工作温度：70 °C最低工作温度：
组织：256KX8封装主体材料：PLASTIC/EPOXY
封装代码：TSSOP封装等效代码：TSSOP32,.8,20
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行：PARALLEL峰值回流温度（摄氏度）：225
电源：3 V认证状态：Not Qualified
部门规模：16K,8K,32K,64K最大待机电流：0.000005 A
子类别：Flash Memories最大压摆率：0.03 mA
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
切换位：YES类型：NOR TYPE
Base Number Matches：1

MX29LV002CTTC-90G 数据手册

 浏览型号MX29LV002CTTC-90G的Datasheet PDF文件第2页浏览型号MX29LV002CTTC-90G的Datasheet PDF文件第3页浏览型号MX29LV002CTTC-90G的Datasheet PDF文件第4页浏览型号MX29LV002CTTC-90G的Datasheet PDF文件第5页浏览型号MX29LV002CTTC-90G的Datasheet PDF文件第6页浏览型号MX29LV002CTTC-90G的Datasheet PDF文件第7页 
MX29LV002C/002NC T/B  
2M-BIT [256K x 8] CMOS SINGLE VOLTAGE  
3V ONLY FLASH MEMORY  
FEATURES  
• Extended single - supply voltage range 2.7V to 3.6V  
• 262,411 x 8  
• Singlepowersupplyoperation  
- 3.0V only operation for read, erase and program  
operation  
• Ready/Busy# pin (RY/BY#)  
-Providesahardwaremethodofdetectingprogramor  
eraseoperationcompletion.  
• Sectorprotection  
- Hardware method to disable any combination of  
sectors from program or erase operations  
-Temporarysectorunprotectallowscodechangesin  
previously locked sectors  
• Fast access time: 70/90ns  
• Lowpowerconsumption  
- 20mA maximum active current  
- 0.2uA typical standby current  
• CFI (Common Flash Interface) compliant  
- Flash device parameters stored on the device and  
provide the host system to access  
• 100,000minimumerase/programcycles  
• Latch-up protected to 100mA from -1V to VCC+1V  
• Boot Sector Architecture  
• Commandregisterarchitecture  
- Byte Programming (9us typical)  
- Sector Erase (Sector structure 16K-Byte x 1,  
8K-Byte x 2, 32K-Byte x1, and 64K-Byte x3)  
• Auto Erase (chip & sector) and Auto Program  
-Automaticallyeraseanycombinationofsectorswith  
Erase Suspend capability.  
- T = Top Boot Sector  
- B = Bottom Boot Sector  
- Automatically program and verify data at specified  
address  
• Erasesuspend/EraseResume  
- Suspends sector erase operation to read data from,  
orprogramdatato,any sectorthatisnotbeingerased,  
then resumes the erase.  
• HardwareRESET#pin(onlyfor29LV002C)  
- Resets internal state machine to read mode  
• Package type:  
- 32-pin TSOP (type 1)  
-32-pinPLCC  
• 20 years data retention  
• Status Reply  
- Data# Polling & Toggle bit for detection of program  
anderaseoperationcompletion.  
GENERAL DESCRIPTION  
The MX29LV002C T/B is a 2-mega bit Flash memory  
organized as 256K bytes of 8 bits. MXIC's Flash memo-  
ries offer the most cost-effective and reliable read/write  
non-volatile random access memory. The MX29LV002C  
T/B is packaged in 32-pin TSOP and 32-pin PLCC. It is  
designed to be reprogrammed and erased in system or  
in standard EPROM programmers.  
TTL level control inputs and fixed power supply levels  
during erase and programming, while maintaining maxi-  
mum EPROM compatibility.  
MXIC Flash technology reliably stores memory contents  
even after 100,000 erase and program cycles. The MXIC  
cell is designed to optimize the erase and programming  
mechanisms. In addition, the combination of advanced  
tunnel oxide processing and low internal electric fields  
for erase and program operations produces reliable cy-  
cling. The MX29LV002C T/B uses a 2.7V~3.6V VCC  
supply to perform the High Reliability Erase and auto  
Program/Erase algorithms.  
The standard MX29LV002C T/B offers access time as  
fast as 70ns, allowing operation of high-speed micropro-  
cessors without wait states. To eliminate bus conten-  
tion, the MX29LV002C T/B has separate chip enable  
(CE#) and output enable (OE#) controls.  
MXIC's Flash memories augment EPROM functionality  
with in-circuit electrical erasure and programming. The  
MX29LV002CT/B uses a command register to manage  
this functionality. The command register allows for 100%  
The highest degree of latch-up protection is achieved  
with MXIC's proprietary non-epi process. Latch-up pro-  
tection is proved for stresses up to 100 milliamps on  
address and data pin from -1V to VCC + 1V.  
P/N:PM1204  
REV. 1.0, JUN. 30, 2005  
1
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