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MX29LA128MBTC-10 PDF预览

MX29LA128MBTC-10

更新时间: 2024-11-13 03:15:03
品牌 Logo 应用领域
旺宏电子 - Macronix 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
76页 411K
描述
128M-BIT SINGLE VOLTAGE 3V ONLY BOOT SECTOR FLASH MEMORY

MX29LA128MBTC-10 数据手册

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PRELIMINARY  
MX29LA128M T/B  
128M-BIT SINGLE VOLTAGE 3V ONLY  
BOOT SECTOR FLASH MEMORY  
FEATURES  
GENERAL FEATURES  
• Status Reply  
• Single Power Supply Operation  
- 2.7 to 3.6 volt for read, erase, and program opera-  
tions  
- Data# polling & Toggle bits provide detection of pro-  
gram and erase operation completion  
• Configuration  
- 16,777,216 x 8 / 8,388,608 x 16 switchable  
• Sector structure  
- 8KB(4KW) x 8 and 64KB(32KW) x 255  
• Latch-up protected to 250mA from -1V to VCC + 1V  
• Low VCC write inhibit is equal to or less than 1.5V  
• Compatible with JEDEC standard  
- Pin-out and software compatible to single power sup-  
ply Flash  
HARDWARE FEATURES  
• Ready/Busy (RY/BY#) Output  
- Provides a hardware method of detecting program  
and erase operation completion  
• Hardware Reset (RESET#) Input  
- Provides a hardware method to reset the internal  
state machine to read mode  
• WP#/ACC input  
- Write protect (WP#) function allows protection of all  
sectors, regardless of sector protection settings  
- ACC (high voltage) accelerates programming time  
for higher throughput during system  
PERFORMANCE  
• High Performance  
- Fast access time: 90R/100ns  
- Page read time:25ns  
SECURITY  
- Sector erase time: 0.5s (typ.)  
- 4 word/8 byte page read buffer  
- 16 word/ 32 byte write buffer:reduces programming  
time for multiple-word/byte updates  
• Low Power Consumption  
• Sector Protection/Chip Unprotect  
- Provides sector group protect function to prevent pro-  
gram or erase operation in the protected sector group  
- Provides chip unprotect function to allow code  
changes  
- Active read current: 18mA(typ.)  
- Active write current: 20mA(typ.)  
- Standby current: 20uA(typ.)  
• Minimum 100,000 erase/program cycle  
• 20-years data retention  
- Provides temporary sector group unprotect function  
for code changes in previously protected sector groups  
• Sector Permanent Lock  
- A unique lock bit feature allows the content to be  
permanently locked  
(Please contact Macronix sales for specific infor-  
mation regarding this permanent lock feature)  
• Secured Silicon Sector  
SOFTWARE FEATURES  
• Support Common Flash Interface (CFI)  
- Flash device parameters stored on the device and  
provide the host system to access.  
• Program Suspend/Program Resume  
- Suspend program operation to read other sectors  
• Erase Suspend/ Erase Resume  
- Provides a 128-word OTP area for permanent, se-  
cure identification  
- Can be programmed and locked at factory or by cus-  
tomer  
- Suspends sector erase operation to read data/pro-  
gram other sectors  
PACKAGE  
• 56-pinTSOP  
GENERAL DESCRIPTION  
The MX29LA128MT/B is a 128-mega bit Flash memory  
organized as 16M bytes of 8 bits or 8M words of 16 bits.  
MXIC's Flash memories offer the most cost-effective and  
reliable read/write non-volatile random access memory.  
The MX29LA128MT/B is packaged in 56-pinTSOP. It is  
designed to be reprogrammed and erased in system or in  
standard EPROM programmers.  
The standard MX29LA128M T/B offers access time as  
fast as 90ns, allowing operation of high-speed micropro-  
cessors without wait states. To eliminate bus conten-  
tion, the MX29LA128M T/B has separate chip enable  
(CE#) and output enable (OE#) controls.  
MXIC's Flash memories augment EPROM functionality  
P/N:PM1170  
REV. 0.04, JUL. 11, 2005  
1

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