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MX29L1611MC-75 PDF预览

MX29L1611MC-75

更新时间: 2024-09-23 22:10:07
品牌 Logo 应用领域
旺宏电子 - Macronix 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
39页 659K
描述
16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM

MX29L1611MC-75 数据手册

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PRELIMINARY  
MX29L1611  
16M-BIT [2M x 8/1M x 16] CMOS  
SINGLE VOLTAGE PAGEMODE FLASH EEPROM  
FEATURES  
• Regulated voltage range 3.0 to 3.6V write, erase and  
read(MX29L1611-75/10/12)  
-Automaticallyprogramsandverifiesdataatspecified  
addresses  
• Fast random access/page mode access time: 75/  
30ns, 100/30ns, 120/30ns.  
• Status Register feature for detection of program or  
erase cycle completion  
• Full voltage range 2.7 to 3.6V write, erase and read  
(MX29L1611-90)  
• Fast random access/page mode access time: 90/  
35ns  
• Low VCC write inhibit < 1.8V  
• Software and hardware data protection  
• Page program operation  
- Internal address and data latches for 128 bytes/64  
words per page  
• Endurance: 10,000 cycles  
• Page access depth: 16 bytes/8 words, page address  
A0, A1, A2  
- Page programming time: 5ms typical  
• Low power dissipation  
• Sector erase architecture  
- 50mA active current  
- 32 equal sectors of 64k bytes each  
- Sector erase time: 200ms typical  
• Auto Erase and Auto Program Algorithms  
- Automatically erases any one of the sectors or the  
whole chip with Erase Suspend capability  
- 20uA standby current  
• Two independently Protected sectors  
• Industry standard surface mount packaging  
- 44 lead SOP, 48 TSOP(I)  
GENERAL DESCRIPTION  
To allow for simple in-system reprogrammability, the  
MX29L1611 does not require high input voltages for  
programming. Three-volt-only commands determine  
the operation of the device. Reading data out of the  
device is similar to reading from an EPROM.  
The MX29L1611 is a 16-mega bit pagemode Flash  
memory organized as either 1M wordx16 or 2M bytex8.  
The MX29L1611 includes 32 sectors of 64KB(65,536  
Bytes or 32,768 words). MXIC's Flash memories offer  
the most cost-effective and reliable read/write non-  
volatile random access memory and fast page mode  
access. TheMX29L1611 ispackaged 44-pinSOPand  
48-TSOP(I). It is designed to be reprogrammed and  
erasedin-systemorin-standardEPROMprogrammers.  
MXICFlashtechnologyreliablystoresmemorycontents  
even after 10,000 cycles. The MXIC's cell is designed  
tooptimizetheeraseandprogrammingmechanisms. In  
addition, the combination of advanced tunnel oxide  
processing and low internal electric fields for erase and  
programmingoperationsproducesreliablecycling. The  
MX29L1611 uses a 2.7V~3.6V VCC supply to perform  
the Auto Erase and Auto Program algorithms.  
ThestandardMX29L1611offersaccesstimesasfastas  
100ns,allowingoperationofhigh-speedmicroprocessors  
withoutwait. Toeliminatebuscontention,theMX29L1611  
has separate chip enable CE, output enable (OE), and  
write enable (WE) controls.  
The highest degree of latch-up protection is achieved  
with MXIC's proprietary non-epi process. Latch-up  
protection is proved for stresses up to 100 milliamps on  
address and data pin from -1V to VCC +1V.  
MXIC's Flash memories augment EPROM functionality  
with in-circuit electrical erasure and programming. The  
MX29L1611 uses a command register to manage this  
functionality.  
P/N:PM0511  
REV. 2.4, NOV. 06, 2001  
1

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