PRELIMINARY
MX29L1611
16M-BIT [2M x 8/1M x 16] CMOS
SINGLE VOLTAGE PAGEMODE FLASH EEPROM
FEATURES
• Regulated voltage range 3.0 to 3.6V write, erase and
read(MX29L1611-75/10/12)
-Automaticallyprogramsandverifiesdataatspecified
addresses
• Fast random access/page mode access time: 75/
30ns, 100/30ns, 120/30ns.
• Status Register feature for detection of program or
erase cycle completion
• Full voltage range 2.7 to 3.6V write, erase and read
(MX29L1611-90)
• Fast random access/page mode access time: 90/
35ns
• Low VCC write inhibit < 1.8V
• Software and hardware data protection
• Page program operation
- Internal address and data latches for 128 bytes/64
words per page
• Endurance: 10,000 cycles
• Page access depth: 16 bytes/8 words, page address
A0, A1, A2
- Page programming time: 5ms typical
• Low power dissipation
• Sector erase architecture
- 50mA active current
- 32 equal sectors of 64k bytes each
- Sector erase time: 200ms typical
• Auto Erase and Auto Program Algorithms
- Automatically erases any one of the sectors or the
whole chip with Erase Suspend capability
- 20uA standby current
• Two independently Protected sectors
• Industry standard surface mount packaging
- 44 lead SOP, 48 TSOP(I)
GENERAL DESCRIPTION
To allow for simple in-system reprogrammability, the
MX29L1611 does not require high input voltages for
programming. Three-volt-only commands determine
the operation of the device. Reading data out of the
device is similar to reading from an EPROM.
The MX29L1611 is a 16-mega bit pagemode Flash
memory organized as either 1M wordx16 or 2M bytex8.
The MX29L1611 includes 32 sectors of 64KB(65,536
Bytes or 32,768 words). MXIC's Flash memories offer
the most cost-effective and reliable read/write non-
volatile random access memory and fast page mode
access. TheMX29L1611 ispackaged 44-pinSOPand
48-TSOP(I). It is designed to be reprogrammed and
erasedin-systemorin-standardEPROMprogrammers.
MXICFlashtechnologyreliablystoresmemorycontents
even after 10,000 cycles. The MXIC's cell is designed
tooptimizetheeraseandprogrammingmechanisms. In
addition, the combination of advanced tunnel oxide
processing and low internal electric fields for erase and
programmingoperationsproducesreliablecycling. The
MX29L1611 uses a 2.7V~3.6V VCC supply to perform
the Auto Erase and Auto Program algorithms.
ThestandardMX29L1611offersaccesstimesasfastas
100ns,allowingoperationofhigh-speedmicroprocessors
withoutwait. Toeliminatebuscontention,theMX29L1611
has separate chip enable CE, output enable (OE), and
write enable (WE) controls.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up
protection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC +1V.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29L1611 uses a command register to manage this
functionality.
P/N:PM0511
REV. 2.4, NOV. 06, 2001
1