Datasheet > 存储 > 闪存> MX29L1611GPC-12

MX29L1611GPC-12

更新时间： 2024-09-23 22:09:47

品牌	Logo	应用领域
旺宏电子 - Macronix		闪存存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
34页	380K
描述
16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM

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MX29L1611GPC-12 数据手册

ADVANCED INFORMATION

MX29L1611G / MX29L1611*

16M-BIT[2Mx8/1Mx16]CMOS

SINGLEVOLTAGEFLASHEEPROM

FEATURES

• 3.3V ±10% for write and read operation

• 11VVpperase/programmingoperation

• Endurance: 100 cycles

• Status Register feature for detection of program or

erase cycle completion

• Low VCC write inhibit is equal to or less than 1.8V

• Softwaredataprotection

• Fast random access time: 90ns/100ns/120ns

• Fastpageaccesstime:30ns(Onlyfor29L1611PC-90/

10/12)

• Pageprogramoperation

- Internal address and data latches for 64 words per

page

• Sectorerasearchitecture

- 32 equal sectors of 64k bytes each

- Sector erase time: 200ms typical

• Auto Erase and Auto Program Algorithms

- Automatically erases any one of the sectors or the

wholechip

- Page programming time: 5ms typical

• Lowpowerdissipation

- 50mA active current

- 20uA standby current

• Two independently Protected sectors

• Package type

-Automaticallyprogramsandverifiesdataatspecified

addresses

- 42 pin plastic DIP

* For page mode read only

GENERAL DESCRIPTION

The MX29L1611G is a 16-mega bit Flash memory

organized as either 1M wordx16 or 2M bytex8. The

MX29L1611Gincludes32sectorsof64KB(65,536Bytes

or32,768words). MXIC'sFlashmemoriesofferthemost

cost-effectiveandreliableread/writenon-volatilerandom

access memory. The MX29L1611G is packaged in 42

pin PDIP.

MX29L1611G does require high input voltages for

programming. Commandsrequire11V input to determine

the operation of the device. Reading data out of the

device is similar to reading from an EPROM.

MXICFlashtechnologyreliablystoresmemorycontents

even after 100 cycles. The MXIC's cell is designed to

optimize the erase and programming mechanisms. In

addition, the combination of advanced tunnel oxide

processing and low internal electric fields for erase and

programmingoperationsproducesreliablecycling. The

MX29L1611G uses a 11V Vpp supply to perform the

Auto Erase and Auto Program algorithms.

The standard MX29L1611G offers access times as fast

as 100ns,allowing operation of high-speed

microprocessorswithoutwait. Toeliminatebuscontention,

the MX29L1611G has separate chip enable CE and,

outputenable(OE).

MXIC's Flash memories augment EPROM functionality

with electrical erasure and programming. The

MX29L1611G uses a command register to manage this

functionality.

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up

protection is proved for stresses up to 100 milliamps on

address and data pin from -1V to VCC +1V.

P/N:PM0604

REV. 0.8, JAN. 24, 2002

12 3 4 5 6 7...34

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与MX29L1611GPC-12相关器件

型号	品牌	获取价格	描述	数据表
MX29L1611GPC-90	Macronix	获取价格	16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM
MX29L1611MC-10	Macronix	获取价格	16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
MX29L1611MC-12	Macronix	获取价格	16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
MX29L1611MC-75	Macronix	获取价格	16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
MX29L1611MC-90	Macronix	获取价格	16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
MX29L1611PC-10	Macronix	获取价格	16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM
MX29L1611PC-12	Macronix	获取价格	16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM
MX29L1611PC-90	Macronix	获取价格	16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM
MX29L1611RC-10	Macronix	获取价格	Flash, 1MX16, 100ns, PDSO48, 12 X 20 MM, REVERSE, TSOP1-48
MX29L1611RC-12	Macronix	获取价格	Flash, 1MX16, 120ns, PDSO48, 12 X 20 MM, REVERSE, TSOP1-48

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