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MX29F8100-12 PDF预览

MX29F8100-12

更新时间: 2024-11-04 21:12:59
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旺宏电子 - Macronix /
页数 文件大小 规格书
37页 257K
描述
Memory IC

MX29F8100-12 数据手册

 浏览型号MX29F8100-12的Datasheet PDF文件第2页浏览型号MX29F8100-12的Datasheet PDF文件第3页浏览型号MX29F8100-12的Datasheet PDF文件第4页浏览型号MX29F8100-12的Datasheet PDF文件第5页浏览型号MX29F8100-12的Datasheet PDF文件第6页浏览型号MX29F8100-12的Datasheet PDF文件第7页 
PRELIMINARY  
MX29F8100  
8M-BIT [1M x 8/512K x 16] CMOS  
SINGLE VOLTAGE FLASH MEMORY  
FEATURES  
5V ±10% write and erase  
JEDEC-standard EEPROM commands  
Endurance : 10,000 cycles  
Fast access time: 120/150ns  
Sector erase architecture  
Page program operation  
- Internal address and data latches for 128 bytes/64  
words per page  
- Page programming time: 3ms typical  
- Byte programming time: 24us in average  
- 8 equal sectors of 128k bytes each  
- Sector erase time: 50ms typical  
Low power dissipation  
- 50mA active current  
- 100uA standby current  
CMOS and TTL compatible inputs and outputs  
Two independently Protected sectors  
Deep Power-Down Current  
- 1uA ICC typical  
Industry standard surface mount packaging  
- 48 lead TSOP, TYPE I  
Auto Erase and Auto Program Algorithms  
- Automatically erases any one of the sectors  
or the whole chip with Erase Suspend capability  
- Automatically programs and verifies data at  
specified addresses  
StatusRegisterfeaturefordetectionof programorerase  
cycle completion  
Low VCC write inhibit < 3.2V  
Software and hardware data protection  
- 44 lead SOP  
GENERAL DESCRIPTION  
TheMX29F8100isa8-megabitFlashmemoryorganized  
as either 512K wordx16 or 1M bytex8. The MX29F8100  
includes 8-128KB(131,072) blocks or 8-64KW(65,536)  
blocks. MXIC's Flash memories offer the most cost-  
effective and reliable read/write non-volatile random  
access memory. The MX29F8100 is packaged in 48-pin  
TSOP or 44-pin SOP. For 48-pin TSOP, CE2 and RY/BY  
are extra pins compared with 44-pin SOP package. This  
istooptimizetheproducts(suchassolid-statediskdrives  
or flash memory cards) control pin budget. PWD is  
available in 48 -pin TSOP for low power environment. All  
the above three pins(CE2,RY/BY and PWD) plus one  
extra VCC pin are not provided in 44-pin SOP. It is  
designed to be reprogrammed and erased in-system or  
in-standard EPROM programmers.  
To allow for simple in-system reprogrammability, the  
MX29F8100 does not require high input voltages for  
programming. Five-volt-only commands determine the  
operation of the device. Reading data out of the device  
is similar to reading from an EPROM.  
MXIC Flash technology reliably stores memory contents  
even after 10,000 cycles. The MXIC's cell is designed to  
optimize the erase and programming mechanisms. In  
addition, the combination of advanced tunnel oxide  
processing and low internal electric fields for erase and  
programming operations produces reliable cycling. The  
MX29F8100 uses a 5V ±10% VCC supply to perform the  
Auto Erase and Auto Program algorithms.  
The highest degree of latch-up protection is achieved  
with MXIC's proprietary non-epi process. Latch-up  
protection is proved for stresses up to 100 milliamps on  
address and data pin from -1V to VCC +1V.  
The standard MX29F8100 offers access times as fast as  
100ns,allowingoperationofhigh-speedmicroprocessors  
without wait. To eliminate bus contention, the  
MX29F8100 has separate chip enables(CE1 and CE2),  
output enable (OE), and write enable (WE) controls.  
MXIC's Flash memories augment EPROM functionality  
with in-circuit electrical erasure and programming. The  
MX29F8100 uses a command register to manage this  
functionality. Thecommandregisterallowsfor100%TTL  
level control inputs and fixed power supply levels during  
erase and programming, while maintaining maximum  
EPROM compatibility.  
REV.3.0, MAR. 08, 1999  
P/N: PM0262  
1

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