Datasheet > MX29F805BPC-90

MX29F805BPC-90

更新时间： 2024-11-05 04:50:55

品牌	Logo	应用领域
旺宏电子 - Macronix		光电二极管
页数	文件大小	规格书
34页	187K
描述
Flash, 512KX16, 90ns, PDIP42

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MX29F805BPC-90 数据手册

ADVANCED INFORMATION

MX29F805T/B

8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY

FEATURES

• 1,048,576 x 8/524,288 x 16 switchable

• Dual power supply operation

• Erase suspend/Erase Resume

- Suspends an erase operation to read data from, or

- 5.0V only operation for read, 10.0V for erase and

program operations

• Fast access time: 90/120ns

program data to, another sector that is not being

erased, then resumes the erase.

• Status Reply

• Low power consumption

- Data polling & Toggle bit for detection of program

and erase cycle completion.

- 30mA maximum active current

- 1uA typical standby current

• Sector protection

• Command register architecture

- Word Programming (14us typical)

- Sector Erase (Sector structure 16K-Bytex1,

8K-Bytex2, 32K-Bytex1, and 64K-Byte x15)

• Auto Erase (chip & sector) and Auto Program

-Automaticallyeraseanycombinationofsectorswith

Erase Suspend capability.

• 100 minimum erase/program cycles

• Latch-up protected to 100mA from -1V to VCC+1V

• Boot Code Sector Architecture

- T = Top Boot Sector

- B = Bottom Boot Sector

• Low VCC write inhibit is equal to or less than 3.2V

• Package type:

- Automatically program and verify data at specified

address

- 42-pin PDIP

GENERAL DESCRIPTION

The MX29F805T/B is a 8-mega bit Flash memory or-

ganized as 1M bytes of 8 bits or 512K words of 16 bits.

MXIC's Flash memories offer the most cost-effective and

reliable read/write non-volatile random access memory.

The MX29F805T/B is packaged in 42-pin PDIP. It is

designed to be reprogrammed and erased in system or

in standard EPROM programmers.

TTL level control inputs and fixed power supply levels

during erase and programming, while maintaining maxi-

mum EPROM compatibility.

MXIC Flash technology reliably stores memory contents

even after 100 erase and program cycles. The MXIC

cell is designed to optimize the erase and programming

mechanisms. In addition, the combination of advanced

tunnel oxide processing and low internal electric fields

for erase and program operations produces reliable cy-

cling. The MX29F805T/B needs 10V power supply to

perform the High Reliability Erase and auto Program/

Erase algorithms.

The standard MX29F805T/B offers access time as fast

as 90ns, allowing operation of high-speed microproces-

sors without wait states. To eliminate bus contention,

the MX29F805T/B has separate chip enable (CE) and

output enable (OE) controls.

MXIC's Flash memories augment EPROM functionality

with electrical erasure and programming. The

MX29F805T/B uses a command register to manage this

functionality. The command register allows for 100%

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up pro-

tection is proved for stresses up to 100 milliamps on

address and data pin from -1V to VCC + 1V.

P/N:PM0614

REV. 0.0, MAR. 31, 1999

12 3 4 5 6 7...34

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与MX29F805BPC-90相关器件

型号	品牌	获取价格	描述	数据表
MX29F805PC-90	Macronix	获取价格	Flash, 512KX16, 90ns, PDIP42, 0.600 INCH, PLASTIC, DIP-42
MX29F8100	Macronix	获取价格	8M-BIT [1M x 8/512K x 16] CMOS SINGLE VOLTAGE FLASH MEMORY
MX29F8100-12	Macronix	获取价格	Memory IC
MX29F8100-15	Macronix	获取价格	Memory IC
MX29F8100MC-10C3	ETC	获取价格	x8/x16 Flash EEPROM
MX29F8100MC-10C4	ETC	获取价格	x8/x16 Flash EEPROM
MX29F8100MC-12	Macronix	获取价格	Flash, 512KX16, 120ns, PDSO44, 0.500 INCH, PLASTIC, SOP-44
MX29F8100MC-12C3	ETC	获取价格	x8/x16 Flash EEPROM
MX29F8100MC-12C4	ETC	获取价格	x8/x16 Flash EEPROM
MX29F8100MC-12CY	Macronix	获取价格	Flash, 1MX8, 120ns, PDSO44, 0.500 INCH, PLASTIC, SOP-44

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