Datasheet > MX29F400BTA-12

MX29F400BTA-12

更新时间： 2024-02-06 12:23:23

品牌	Logo	应用领域
旺宏电子 - Macronix		光电二极管内存集成电路
页数	文件大小	规格书
45页	719K
描述
Flash, 256KX16, 120ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP1-48

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技术参数
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MX29F400BTA-12 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	TSOP1	包装说明：	12 X 20 MM, PLASTIC, TSOP1-48
针数：	48	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8542.32.00.51
风险等级：	5.83	最长访问时间：	120 ns
其他特性：	100,000 MINIMUM ERASE/PROGRAM CYCLES	备用内存宽度：	8
启动块：	BOTTOM	命令用户界面：	YES
数据轮询：	YES	耐久性：	100000 Write/Erase Cycles
JESD-30 代码：	R-PDSO-G48	JESD-609代码：	e0
长度：	18.4 mm	内存密度：	4194304 bit
内存集成电路类型：	FLASH	内存宽度：	16
功能数量：	1	部门数/规模：	1,2,1,7
端子数量：	48	字数：	262144 words
字数代码：	256000	工作模式：	ASYNCHRONOUS
最高工作温度：	125 °C	最低工作温度：	-40 °C
组织：	256KX16	封装主体材料：	PLASTIC/EPOXY
封装代码：	TSOP1	封装等效代码：	TSSOP48,.8,20
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE, THIN PROFILE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	NOT SPECIFIED
电源：	5 V	编程电压：	5 V
认证状态：	Not Qualified	就绪/忙碌：	YES
座面最大高度：	1.2 mm	部门规模：	16K,8K,32K,64K
最大待机电流：	0.00002 A	子类别：	Flash Memories
最大压摆率：	0.05 mA	最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	4.5 V	标称供电电压 (Vsup)：	5 V
表面贴装：	YES	技术：	CMOS
温度等级：	AUTOMOTIVE	端子面层：	TIN LEAD
端子形式：	GULL WING	端子节距：	0.5 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
切换位：	YES	类型：	NOR TYPE
宽度：	12 mm	Base Number Matches：	1

MX29F400BTA-12 数据手册

MX29F400T/B

4M-BIT[512Kx8/256Kx16]CMOSFLASHMEMORY

FEATURES

• 524,288 x 8/262,144 x 16 switchable

• Singlepowersupplyoperation

erase cycle completion.

• Ready/Busy pin (RY/BY)

- 5.0V only operation for read, erase and program

operation

-Providesahardwaremethodofdetectingprogramor

erase cycle completion.

• Fast access time: 55/70/90/120ns

• Lowpowerconsumption

- Sector protect/unprotect for 5V only system or 5V/

12V system.

- 40mA maximum active current(5MHz)

- 1uA typical standby current

• Commandregisterarchitecture

- Byte/word Programming (7us/12us typical)

- Sector Erase (Sector structure 16K-Bytex1, 8K-

Bytex2, 32K-Bytex1, and 64K-Byte x7)

• Auto Erase (chip & sector) and Auto Program

-Automaticallyeraseanycombinationofsectorswith

Erase Suspend capability.

• Sectorprotection

- Hardware method to disable any combination of

sectors from program or erase operations

• 100,000minimumerase/programcycles

• Latch-up protected to 100mA from -1V to VCC+1V

• Boot Code Sector Architecture

- T = Top Boot Sector

- B = Bottom Boot Sector

• Low VCC write inhibit is equal to or less than 3.2V

• Package type:

- Automatically program and verify data at specified

address

- 44-pin SOP

• Erasesuspend/EraseResume

- 48-pin TSOP

- Suspends an erase operation to read data from, or

program data to, another sector that is not being

erased, then resumes the erase.

• Compatibility with JEDEC standard

- Pinout and software compatible with single-power

supply Flash

• Status Reply

• 20 years data retention

-Datapolling&Togglebitfordetectionofprogramand

GENERAL DESCRIPTION

The MX29F400T/B is a 4-mega bit Flash memory orga-

nized as 512K bytes of 8 bits or 256K words of 16 bits.

MXIC's Flash memories offer the most cost-effective

and reliable read/write non-volatile random access

memory. The MX29F400T/B is packaged in 44-pin SOP,

48-pin TSOP. It is designed to be reprogrammed and

erased in system or in standard EPROM programmers.

TTL level control inputs and fixed power supply levels

during erase and programming, while maintaining maxi-

mum EPROM compatibility.

MXIC Flash technology reliably stores memory contents

even after 100,000 erase and program cycles. The MXIC

cell is designed to optimize the erase and programming

mechanisms. In addition, the combination of advanced

tunnel oxide processing and low internal electric fields

for erase and program operations produces reliable cy-

cling. The MX29F400T/B uses a 5.0V±10% VCC sup-

ply to perform the High Reliability Erase and auto Pro-

gram/Erase algorithms.

The standard MX29F400T/B offers access time as fast

as 55ns, allowing operation of high-speed microproces-

sors without wait states. To eliminate bus contention,

the MX29F400T/B has separate chip enable (CE) and

output enable (OE) controls.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29F400T/B uses a command register to manage this

functionality. The command register allows for 100%

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up pro-

tection is proved for stresses up to 100 milliamps on

address and data pin from -1V to VCC + 1V.

P/N:PM0439

REV. 1.9 , APR. 03, 2002

12 3 4 5 6 7...45

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与MX29F400BTA-12相关器件

型号	品牌	描述	获取价格	数据表
MX29F400BTA-90	Macronix	Flash, 256KX16, 90ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP1-48	获取价格
MX29F400BTC-12	ETC	EEPROM\|FLASH\|256KX16/512KX8\|CMOS\|TSSOP\|48PIN\|PLASTIC	获取价格
MX29F400BTC12G	Macronix	256KX16 FLASH 5V PROM, 120ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP1-48	获取价格
MX29F400BTC-12G	Macronix	Flash, 256KX16, 120ns, PDSO48, 12 X 20 MM, PLASTIC, MO-142, TSOP1-48	获取价格
MX29F400BTC-55	ETC	x8/x16 Flash EEPROM	获取价格
MX29F400BTC55G	Macronix	256KX16 FLASH 5V PROM, 55ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP1-48	获取价格

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