Datasheet > 存储 > 闪存> MX29F200CTMI-55

MX29F200CTMI-55

更新时间： 2024-11-04 03:27:11

品牌	Logo	应用领域
旺宏电子 - Macronix		/
页数	文件大小	规格书
44页	435K
描述
2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MX29F200CTMI-55 数据手册

MX29F200C T/B

2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY

FEATURES

• 5.0V±10% for read, erase and write operation

• 131072x16/262144x8 switchable

• Fast access time: 55/70/90ns

• CompatiblewithMX29F200T/Bdevice

• Lowpowerconsumption

- 40mA maximum active current@5MHz

- 1uA typical standby current

• Command register architecture

- Byte/Word Programming (9us/11us typical)

-SectorErase(16K-Bytex1,8K-Bytex2,32K-Bytex1,

and 64K-Byte x3)

- Superiorinadvertentwriteprotection

• Sector protection

- Hardware method to disable any combination of

sectors from program or erase operations

-Temporarysectorunprotectallowscodechangesin

previously locked sectors

• Sector protect/chip unprotect for 5V only system

• 100,000minimumerase/programcycles

• Latch-up protected to 100mA from -1V to VCC+1V

• Boot Code Sector Architecture

- T = Top Boot Sector

• Auto Erase (chip & sector) and Auto Program

- Automatically erase any combination of sectors or

the whole chip with Erase Suspend capability.

- Automatically program and verify data at specified

address

- B = Bottom Boot Sector

• Low VCC write inhibit is equal to or less than 3.2V

• Erase suspend/ Erase Resume

- Suspends an erase operation to read data from, or

programdatatoasectorthatisnotbeingerased,then

resume the erase operation.

• Status Reply

- Data# Polling & Toggle bit for detection of program

and erase cycle completion.

• Ready/Busy#pin(RY/BY#)

• Hardwareresetpin

- Resets internal state mechine to the read mode

• 20 years data retention

- Provides a hardware method or detecting program

or erase cycle completion

• Package type:

- 44-pin SOP

• Compatibility with JEDEC standard

- Pinout and software compatible with single-power

supply Flash

- 48-pin TSOP

- All Pb-free devices are RoHS Compliant

GENERAL DESCRIPTION

TheMX29F200CT/Bisa2-megabit, single5VoltFlash

memoryorganizedas1Mwordx16or2Mbytex8MXIC's

Flash memories offer the most cost-effective and reli-

able read/write non-volatile random access memory.

TheMX29F200CT/Bispackagedin44-pinSOPand48-

pin TSOP. It is designed to be reprogrammed and

erasedin-systemorin-standardEPROMprogrammers.

TTL level control inputs and fixed power supply levels

duringeraseandprogramming,whilemaintainingmaxi-

mum EPROM compatibility.

MXICFlashtechnologyreliablystoresmemorycontents

evenafter100,000eraseandprogramcycles. TheMXIC

cell is designed to optimize the erase and programming

mechanisms. In addition, the combination of advanced

tunneloxideprocessingandlowinternalelectricfieldsfor

erase and programming operations produces reliable

cycling. The MX29F200C T/B uses a 5.0V ±10% VCC

supply to perform the High Reliability Erase and auto

Program/Erasealgorithms.

ThestandardMX29F200CT/Boffersaccesstimeasfast

as55ns, allowingoperationofhigh-speedmicroproces-

sorswithoutwaitstates. Toeliminatebuscontention,the

MX29F200C T/B has separate chip enable (CE#) and

output enable (OE# ) controls.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29F200C T/B uses a command register to manage

thisfunctionality. Thecommandregisterallowsfor100%

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up

protection is proved for stresses up to 100 milliamps on

address and data pin from -1V to VCC + 1V.

P/N:PM1250

REV. 1.0, DEC. 14, 2005

12 3 4 5 6 7...44

中文翻译

下载PDF

与MX29F200CTMI-55相关器件

型号	品牌	获取价格	描述	数据表
MX29F200CTMI-55G	Macronix	获取价格	2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
MX29F200CTMI-70	Macronix	获取价格	2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
MX29F200CTMI-70G	Macronix	获取价格	2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
MX29F200CTMI-90	Macronix	获取价格	2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
MX29F200CTMI-90G	Macronix	获取价格	2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
MX29F200CTTC-70	Macronix	获取价格	Flash, 128KX16, 70ns, PDSO48,
MX29F200CTTC-70G	Macronix	获取价格	Flash, 128KX16, 70ns, PDSO48,
MX29F200CTTC-90	Macronix	获取价格	Flash, 128KX16, 90ns, PDSO48,
MX29F200CTTI-55	Macronix	获取价格	2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
MX29F200CTTI-55G	Macronix	获取价格	2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY

与MX29F200CTMI-55相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

7
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

31
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

30

产品中心

服务支持

精选活动

关于我们

帮助中心

MX29F200CTMI-55

MX29F200CTMI-55 数据手册

与MX29F200CTMI-55相关器件

与MX29F200CTMI-55相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MX29F200CTMI-55

MX29F200CTMI-55 数据手册

与MX29F200CTMI-55相关器件

与MX29F200CTMI-55相关文章

您还可以找

您在本页遇到什么问题？