Datasheet > MX29F1615

MX29F1615

更新时间： 2024-11-02 22:54:35

品牌	Logo	应用领域
旺宏电子 - Macronix		闪存可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
26页	339K
描述
16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM

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MX29F1615 数据手册

PRELIMINARY

MX29F1615

16M-BIT [2M x8/1M x16] CMOS

SINGLE VOLTAGE FLASH EEPROM

FEATURES

• Software and hardware data protection

• 5V ±10% write and erase

• Pageprogramoperation

- Internal address and data latches for 64 words per

page

- Page programming time: 0.9ms typical

• Low power dissipation

- 30mA typical active current

- 1uA typical standby current

• CMOS and TTL compatible inputs and outputs

• Package Type:

- 42 lead PDIP

• JEDEC-standard EEPROM commands

• Endurance:100 cycles

• Fast access time: 90/100/120ns

• Auto Erase and Auto Program Algorithms

- Automatically erases the whole chip

- Automatically programs and verifies data at

specified addresses

• Status Register feature for detection of

program or erase cycle completion

• Low VCC write inhibit is equal to or less than 3.2V

GENERAL DESCRIPTION

TheMX29F1615isa16-megabitFlashmemoryorganized

as either 1M wordx16 or 2M bytex8. MXIC's Flash

memories offer the most cost-effective and reliable read/

write non-volatile random access memory. The

MX29F1615 is packaged in 42-pin PDIP. It is designed

to be reprogrammed and in standard EPROM

programmers.

To allow for simple in-system reprogrammability, the

MX29F1615 requireshighinputvoltages(10V)onBYTE/

VPPpinforprogramming. Readingdataoutofthedevice

is similar to reading from an EPROM.

MXIC Flash technology reliably stores memory contents

even after 100 cycles. The MXIC's cell is designed to

optimize the erase and programming mechanisms. In

addition, the combination of advanced tunnel oxide

processing and low internal electric fields for erase and

programming operations produces reliable cycling. The

MX29F1615 uses a 5V ±10% VCC supply to perform the

Auto Erase and Auto Program algorithms.

The standard MX29F1615 offers access times as fast as

90ns,allowing operation of high-speed microprocessors

withoutwait. Toeliminatebuscontention,theMX29F1615

has separate chip enables(CE) and output enable (OE)

control.

MXIC's Flash memories augment EPROM functionality

withelectricalerasureandprogramming. TheMX29F1615

uses a command register to manage this functionality.

The command register allows for 100% TTL level control

inputs and fixed power supply levels during erase and

programming, while maintaining maximum EPROM

compatibility.

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up

protection is proved for stresses up to 100 milliamps on

address and data pin from -1V to VCC +1V.

REV.1.1, JUN. 15, 2001

P/N: PM0615

12 3 4 5 6 7...26

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与MX29F1615相关器件

型号	品牌	获取价格	描述	数据表
MX29F1615-90	Macronix	获取价格	Flash, 1MX16, 90ns, PDIP42, 0.600 INCH, PLASTIC, DIP-42
MX29F200BMC-12	Macronix	获取价格	2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
MX29F200BMC-55	Macronix	获取价格	2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
MX29F200BMC-70	Macronix	获取价格	2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
MX29F200BMC-90	Macronix	获取价格	2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
MX29F200BMI-12	Macronix	获取价格	2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
MX29F200BMI-70	Macronix	获取价格	2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
MX29F200BMI-90	Macronix	获取价格	2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
MX29F200BTC-12	Macronix	获取价格	2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
MX29F200BTC-55	Macronix	获取价格	2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY

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