Datasheet > MX29F1611

MX29F1611

更新时间： 2024-11-26 10:39:55

品牌	Logo	应用领域
其他 - ETC		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
36页	158K
描述
16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM

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MX29F1611 数据手册

INDEX

PRELIMINARY

MX29F1611

16M-BIT [2M x 8/1M x 16] CMOS

SINGLE VOLTAGE PAGEMODE FLASH EEPROM

FEATURES

• Low VCC write inhibit is equal to or less than 3.2V

• Software and hardware data protection

• Page program operation

• 5V ± 5% write, erase and read

• JEDEC-standard EEPROM commands

• Endurance: 10,000 cycles

- Internal address and data latches for 128 bytes/64

words per page

- Page programming time: 5ms typical

- Byte programming time: 39us in average

• Low power dissipation

• Fast access time: 100/120/150ns

• Fast pagemode access time: 50/60/70ns

• Page access depth: 16 bytes/8 words, page address

A0, A1, A2

• Sector erase architecture

- 80mA active current

- 100uA standby current

• CMOS inputs and outputs

• Two independently Protected sectors

• Industry standard surface mount packaging

- 44 lead SOP

- 16 equal sectors of 128k bytes each

- Sector erase time: 150ms typical

• Auto Erase and Auto Program Algorithms

- Automatically erases any one of the sectors or the

whole chip with Erase Suspend capability

- Automatically programs and verifies data at

specified addresses

• Status Register feature for detection of program or

erase cycle completion

GENERAL DESCRIPTION

The MX29F1611 is a 16-mega bit Pagemode Flash

memory organized as either 1M wordx16 or 2M bytex8.

The MX29F1611 includes 16-128KB(131,072 Bytes)

blocks or 16-64KW(65,536 Words)blocks. MXIC's Flash

memories offer the most cost-effective and reliable read/

write non-volatile random access memory and fast page

mode access. The MX29F1611 is packaged 44-pin

SOP. It is designed to be reprogrammed and erased in-

system or in-standard EPROM programmers.

To allow for simple in-system reprogrammability, the

MX29F1611 does not require high input voltages for

programming. Five-volt-only commands determine the

operation of the device. Reading data out of the device

is similar to reading from an EPROM.

MXIC Flash technology reliably stores memory contents

even after 10,000 cycles. The MXIC's cell is designed to

optimize the erase and programming mechanisms. In

addition, the combination of advanced tunnel oxide

processing and low internal electric fields for erase and

programming operations produces reliable cycling. The

MX29F1611 uses a 5V ± 5% VCC supply to perform the

Auto Erase and Auto Program algorithms.

The standard MX29F1611 offers access times as fast as

100ns,allowingoperationofhigh-speedmicroprocessors

without wait. To eliminate bus contention, the

MX29F1611hasseparatechipenableCE, outputenable

(OE), and write enable (WE) controls.

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up

protection is proved for stresses up to 100 milliamps on

address and data pin from -1V to VCC +1V.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29F1611 uses a command register to manage this

functionality.

P/N: PM0440

REV. 1.6, JUL. 16, 1998

12 3 4 5 6 7...36

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与MX29F1611相关器件

型号	品牌	获取价格	描述	数据表
MX29F1611MC-10	Macronix	获取价格	Flash, 1MX16, 100ns, PDSO44, 0.500 INCH, PLASTIC, SOP-44
MX29F1611MC-15	Macronix	获取价格	Flash, 1MX16, 150ns, PDSO44, 0.500 INCH, PLASTIC, SOP-44
MX29F1615	Macronix	获取价格	16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM
MX29F1615-90	Macronix	获取价格	Flash, 1MX16, 90ns, PDIP42, 0.600 INCH, PLASTIC, DIP-42
MX29F200BMC-12	Macronix	获取价格	2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
MX29F200BMC-55	Macronix	获取价格	2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
MX29F200BMC-70	Macronix	获取价格	2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
MX29F200BMC-90	Macronix	获取价格	2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
MX29F200BMI-12	Macronix	获取价格	2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
MX29F200BMI-70	Macronix	获取价格	2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY

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