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MX29F040TC-55G PDF预览

MX29F040TC-55G

更新时间: 2024-11-03 04:58:07
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旺宏电子 - Macronix /
页数 文件大小 规格书
40页 592K
描述
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY

MX29F040TC-55G 数据手册

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MX29F040  
4M-BIT[512KX8]CMOSEQUALSECTORFLASHMEMORY  
FEATURES  
program data to, another sector that is not being  
erased, then resumes the erase.  
• 524,288 x 8 only  
• Single power supply operation  
- 5.0V only operation for read, erase and program op-  
eration  
• Status Reply  
- Data polling & Toggle bit for detection of program  
and erase cycle completion.  
• Fast access time: 55/70/90/120ns  
• Low power consumption  
• Sector protect/unprotect for 5V only system or 5V/  
12V system.  
- 30mA maximum active current(5MHz)  
- 1uA typical standby current  
• Sector protection  
- Hardware method to disable any combination of  
sectors from program or erase operations  
• 100,000 minimum erase/program cycles  
• Latch-up protected to 100mA from -1V to VCC+1V  
• Low VCC write inhibit is equal to or less than 3.2V  
• Package type:  
• Command register architecture  
- Byte Programming (7us typical)  
- Sector Erase  
8 equal sectors of 64K-Byte each  
• Auto Erase (chip & sector) and Auto Program  
- Automatically erase any combination of sectors with  
Erase Suspend capability.  
- 32-pin PLCC, TSOP or PDIP  
• Compatibility with JEDEC standard  
- Pinout and software compatible with single-power  
supply Flash  
- Automatically program and verify data at specified  
address  
• Erase suspend/Erase Resume  
- Suspends an erase operation to read data from, or  
• 20 years data retention  
GENERAL DESCRIPTION  
The MX29F040 is a 4-mega bit Flash memory organized  
as 512K bytes of 8 bits. MXIC's Flash memories offer  
the most cost-effective and reliable read/write non-vola-  
tile random access memory. The MX29F040 is pack-  
aged in 32-pin PLCC, TSOP, PDIP. It is designed to be  
reprogrammed and erased in system or in standard  
EPROM programmers.  
during erase and programming, while maintaining maxi-  
mum EPROM compatibility.  
MXIC Flash technology reliably stores memory  
contents even after 100,000 erase and program  
cycles. The MXIC cell is designed to optimize the  
erase and program mechanisms. In addition, the  
combination of advanced tunnel oxide processing  
and low internal electric fields for erase and  
programming operations produces reliable cycling.  
The MX29F040 uses a 5.0V±10% VCC supply to  
perform the High Reliability Erase and auto  
Program/Erase algorithms.  
The standard MX29F040 offers access time as fast as  
55ns, allowing operation of high-speed microprocessors  
without wait states. To eliminate bus contention, the  
MX29F040 has separate chip enable (CE) and output  
enable (OE) controls.  
MXIC's Flash memories augment EPROM functionality  
with in-circuit electrical erasure and programming. The  
MX29F040 uses a command register to manage this  
functionality. The command register allows for 100%  
TTL level control inputs and fixed power supply levels  
The highest degree of latch-up protection is  
achieved with MXIC's proprietary non-epi process.  
Latch-up protection is proved for stresses up to 100  
milliamps on address and data pin from -1V to VCC  
+ 1V.  
P/N:PM0538  
REV. 2.3, DEC. 10, 2004  
1

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