Datasheet > 存储 > 闪存> MX29F040TC-12

MX29F040TC-12

更新时间： 2024-11-25 22:54:35

品牌	Logo	应用领域
旺宏电子 - Macronix		闪存存储内存集成电路光电二极管
页数	文件大小	规格书
39页	872K
描述
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY

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中文翻译

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MX29F040TC-12 数据手册

MX29F040

4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY

FEATURES

• 524,288 x 8 only

• Single power supply operation

or program data to, another sector that is not being

erased, then resumes the erase.

- 5.0V only operation for read, erase and program

operation

• Fast access time: 55/70/90/120ns

• Low power consumption

- 30mA maximum active current(5MHz)

- 1uA typical standby current

• Status Reply

- Data polling & Toggle bit for detection of program

and erase cycle completion.

• Sector protect/unprotect for 5V only system or 5V/

12V system.

• Sector protection

• Command register architecture

- Byte Programming (7us typical)

- Sector Erase

8 equal sectors of 64K-Byte each

• Auto Erase (chip & sector) and Auto Program

- Automatically erase any combination of sectors

with Erase Suspend capability.

- Automatically program and verify data at specified

address

- Hardware method to disable any combination of

sectors from program or erase operations

• 100,000minimumerase/programcycles

• Latch-up protected to 100mA from -1V to VCC+1V

• Low VCC write inhibit is equal to or less than 3.2V

• Package type:

- 32-pin PLCC, TSOP or PDIP

• Compatibility with JEDEC standard

- Pinout and software compatible with single-power

supply Flash

• Erasesuspend/EraseResume

- Suspends an erase operation to read data from,

• 20 years data retention

GENERAL DESCRIPTION

TheMX29F040isa4-megabitFlashmemoryorganized

as512Kbytesof8bits. MXIC'sFlashmemoriesofferthe

most cost-effective and reliable read/write non-volatile

random access memory. The MX29F040 is packaged

in 32-pin PLCC, TSOP, PDIP. It is designed to be

reprogrammed and erased in system or in standard

EPROM programmers.

during erase and programming, while maintaining

maximum EPROM compatibility.

MXIC Flash technology reliably stores memory

contents even after 100,000 erase and program

cycles. The MXIC cell is designed to optimize the

erase and program mechanisms. In addition, the

combination of advanced tunnel oxide processing

and low internal electric fields for erase and

programming operations produces reliable cycling.

The MX29F040 uses a 5.0V±10% VCC supply to

perform the High Reliability Erase and auto

Program/Erase algorithms.

The standard MX29F040 offers access time as fast as

55ns,allowingoperationofhigh-speedmicroprocessors

without wait states. To eliminate bus contention, the

MX29F040 has separate chip enable (CE) and output

enable (OE ) controls.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29F040 uses a command register to manage this

functionality. The command register allows for 100%

TTL level control inputs and fixed power supply levels

The highest degree of latch-up protection is

achieved with MXIC's proprietary non-epi process.

Latch-up protection is proved for stresses up to

100 milliamps on address and data pin from -1V to

VCC + 1V.

P/N:PM0538

REV. 1.6, AUG. 08, 2001

12 3 4 5 6 7...39

中文翻译

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与MX29F040TC-12相关器件

型号	品牌	获取价格	描述	数据表
MX29F040TC-12G	Macronix	获取价格	4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
MX29F040TC-55	Macronix	获取价格	4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
MX29F040TC-55G	Macronix	获取价格	4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
MX29F040TC-70	Macronix	获取价格	4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
MX29F040TC-70G	Macronix	获取价格	4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
MX29F040TC-90	Macronix	获取价格	4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
MX29F040TC-90G	Macronix	获取价格	4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
MX29F040TI-55	Macronix	获取价格	4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
MX29F040TI-55G	Macronix	获取价格	4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
MX29F040TI-70	Macronix	获取价格	4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY

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