MX29F040
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
FEATURES
• 524,288 x 8 only
• Single power supply operation
or program data to, another sector that is not being
erased, then resumes the erase.
- 5.0V only operation for read, erase and program
operation
• Fast access time: 55/70/90/120ns
• Low power consumption
- 30mA maximum active current(5MHz)
- 1uA typical standby current
• Status Reply
- Data polling & Toggle bit for detection of program
and erase cycle completion.
• Sector protect/unprotect for 5V only system or 5V/
12V system.
• Sector protection
• Command register architecture
- Byte Programming (7us typical)
- Sector Erase
8 equal sectors of 64K-Byte each
• Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors
with Erase Suspend capability.
- Automatically program and verify data at specified
address
- Hardware method to disable any combination of
sectors from program or erase operations
• 100,000minimumerase/programcycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Low VCC write inhibit is equal to or less than 3.2V
• Package type:
- 32-pin PLCC, TSOP or PDIP
• Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
• Erasesuspend/EraseResume
- Suspends an erase operation to read data from,
• 20 years data retention
GENERAL DESCRIPTION
TheMX29F040isa4-megabitFlashmemoryorganized
as512Kbytesof8bits. MXIC'sFlashmemoriesofferthe
most cost-effective and reliable read/write non-volatile
random access memory. The MX29F040 is packaged
in 32-pin PLCC, TSOP, PDIP. It is designed to be
reprogrammed and erased in system or in standard
EPROM programmers.
during erase and programming, while maintaining
maximum EPROM compatibility.
MXIC Flash technology reliably stores memory
contents even after 100,000 erase and program
cycles. The MXIC cell is designed to optimize the
erase and program mechanisms. In addition, the
combination of advanced tunnel oxide processing
and low internal electric fields for erase and
programming operations produces reliable cycling.
The MX29F040 uses a 5.0V±10% VCC supply to
perform the High Reliability Erase and auto
Program/Erase algorithms.
The standard MX29F040 offers access time as fast as
55ns,allowingoperationofhigh-speedmicroprocessors
without wait states. To eliminate bus contention, the
MX29F040 has separate chip enable (CE) and output
enable (OE ) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29F040 uses a command register to manage this
functionality. The command register allows for 100%
TTL level control inputs and fixed power supply levels
The highest degree of latch-up protection is
achieved with MXIC's proprietary non-epi process.
Latch-up protection is proved for stresses up to
100 milliamps on address and data pin from -1V to
VCC + 1V.
P/N:PM0538
REV. 1.6, AUG. 08, 2001
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