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MX29F040CTI-55 PDF预览

MX29F040CTI-55

更新时间: 2024-11-03 03:27:15
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旺宏电子 - Macronix /
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38页 581K
描述
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY

MX29F040CTI-55 数据手册

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MX29F040C  
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY  
EQUAL SECTOR FLASH MEMORY  
FEATURES  
then resumes the erase  
• Status Reply  
• 524,288 x 8 only  
• Single power supply operation  
- 5.0V only operation for read, erase and program op-  
eration  
- Data# Polling & Toggle bit for detection of program  
and erase cycle completion  
• Sector protect/chip unprotect for 5V only system  
• Sector protection  
• Fast access time: 55/70/90ns  
• CompatiblewithMX29F040device  
• Low power consumption  
- 30mA maximum active current(5MHz)  
- 1uA typical standby current  
• Command register architecture  
- Byte Programming (9us typical)  
- Sector Erase  
8 equal sectors of 64K-Byte each  
• Auto Erase (chip & sector) and Auto Program  
- Automatically erase any combination of sectors with  
Erase Suspend capability  
- Hardware method to disable any combination of sec-  
tors from program or erase operations  
-Temporarysectorunprotectallowscodechangesin  
previously locked sectors  
• 100,000minimumerase/programcycles  
• 100,000 minimum erase/program cycles  
• Latch-up protected to 100mA from -1V toVCC+1V  
• Low VCC write inhibit is equal to or less than 3.2V  
• Package type:  
- 32-pin PLCC, TSOP or PDIP  
- All Pb-free devices are RoHS Compliant  
• Compatibility with JEDEC standard  
- Pinout and software compatible with single-power  
supply Flash  
- Automatically program and verify data at specified  
address  
• Erase suspend/Erase Resume  
- Suspends an erase operation to read data from, or  
program data to, another sector that is not being erased,  
• 20 years data retention  
GENERAL DESCRIPTION  
The MX29F040C is a 4-mega bit Flash memory orga-  
nized as 512K bytes of 8 bits. MXIC's Flash memories  
offer the most cost-effective and reliable read/write non-  
volatile random access memory. The MX29F040C is  
packaged in 32-pin PLCC, TSOP, PDIP. It is designed  
to be reprogrammed and erased in system or in standard  
EPROM programmers.  
erase and programming, while maintaining maximum  
EPROM compatibility.  
MXIC Flash technology reliably stores memory con-  
tents even after 100,000 erase and program cycles.  
The MXIC cell is designed to optimize the erase  
and program mechanisms. In addition, the combi-  
nation of advanced tunnel oxide processing and low  
internal electric fields for erase and programming  
operations produces reliable cycling. The  
MX29F040C uses a 5.0V±10% VCC supply to per-  
form the High Reliability Erase and auto Program/  
Erase algorithms.  
The standard MX29F040C offers access time as fast as  
55ns, allowing operation of high-speed microprocessors  
without wait states. To eliminate bus contention, the  
MX29F040C has separate chip enable (CE#) and output  
enable (OE#) controls.  
MXIC's Flash memories augment EPROM functionality  
with in-circuit electrical erasure and programming. The  
MX29F040C uses a command register to manage this  
functionality. The command register allows for 100%TTL  
level control inputs and fixed power supply levels during  
The highest degree of latch-up protection is  
achieved with MXIC's proprietary non-epi process.  
Latch-up protection is proved for stresses up to 100  
milliamps on address and data pin from -1V to VCC  
+ 1V.  
P/N:PM1201  
REV. 1.0, DEC. 20, 2005  
1

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