Datasheet > 存储 > 闪存> MX29F002TTC-70G

MX29F002TTC-70G

更新时间： 2024-11-03 04:58:07

品牌	Logo	应用领域
旺宏电子 - Macronix		闪存存储内存集成电路光电二极管
页数	文件大小	规格书
51页	609K
描述
2M-BIT [256K x 8] CMOS FLASH MEMORY

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中文翻译

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数据手册

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MX29F002TTC-70G 数据手册

MX29F002/002N T/B

2M-BIT [256K x 8] CMOS FLASH MEMORY

FEATURES

•

262,144x 8 only

-Datapolling&Togglebitfordetectionofprogramand

erase cycle completion.

Fast access time: 55/70/90/120ns

Lowpowerconsumption

•

Sectorprotection

- 30mA maximum active current(5MHz)

- 1uA typical standby current

- Hardware method to disable any combination of

sectors from program or erase operations

-Sectorprotect/unprotectfor5Vonlysystemor5V/12V

system

•

Programming and erasing voltage 5V ± 10%

Commandregisterarchitecture

- Byte Programming (7us typical)

- Sector Erase (16K-Byte x1, 8K-Byte x 2, 32K-Byte

x1, and 64K-Byte x 3)

•

100,000minimumerase/programcycles

Latch-up protected to 100mA from -1 to VCC+1V

Boot Code Sector Architecture

- T = Top Boot Sector

•

Auto Erase (chip & sector) and Auto Program

-Automaticallyeraseanycombinationofsectorsorthe

whole chip with Erase Suspend capability.

-Automaticallyprogramsandverifiesdataatspecified

address

- B = Bottom Boot Sector

•

HardwareRESETpin(onlyfor29F002T/B)

- Resets internal state machine to read mode

Low VCC write inhibit is equal to or less than 3.2V

Package type:

•

EraseSuspend/EraseResume

- Suspends an erase operation to read data from, or

programdatato,asectorthatisnotbeingerased,then

resumestheeraseoperation.

- 32-pin PDIP

-32-pinPLCC

- 32-pin TSOP (Type 1)

Status Reply

•

20 years data retention

GENERAL DESCRIPTION

MXIC'sFlashtechnologyreliablystoresmemorycontents

even after 100,000 erase and program cycles. The MXIC

cell is designed to optimize the erase and programming

mechanisms. In addition, the combination of advanced

tunnel oxide processing and low internal electric fields for

erase and programming operations produces reliable

cycling. The MX29F002T/B uses a 5.0V ± 10% VCC

supply to perform the High Reliability Erase and auto

Program/Erasealgorithms.

The MX29F002T/B is a 2-mega bit Flash memory organ-

ized as 256K bytes of 8 bits only. MXIC's Flash memories

offer the most cost-effective and reliable read/write non-

volatile random access memory. The MX29F002T/B is

packaged in 32-pin PDIP,PLCC and 32-pin TSOP(I). It is

designedtobereprogrammedanderasedin-systemorin-

standardEPROMprogrammers.

ThestandardMX29F002T/Boffersaccesstimeasfastas

55ns, allowing operation of high-speed microprocessors

without wait states. To eliminate bus contention, the

MX29F002T/B has separate chip enable (CE) and output

enable(OE)controls.

Thehighestdegreeoflatch-upprotectionisachievedwith

MXIC'sproprietarynon-epiprocess. Latch-upprotectionis

proved for stresses up to 100 milliamps on address and

data pin from -1V to VCC + 1V.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29F002T/B uses a command register to manage this

functionality. Thecommandregisterallowsfor100%TTL

level control inputs and fixed power supply levels during

erase and programming, while maintaining maximum

EPROM compatibility.

REV. 1.5, MAR. 28, 2005

P/N: PM0547

12 3 4 5 6 7...51

中文翻译

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与MX29F002TTC-70G相关器件

型号	品牌	获取价格	描述	数据表
MX29F002TTC-90	Macronix	获取价格	2M-BIT [256K x 8] CMOS FLASH MEMORY
MX29F002TTC-90G	Macronix	获取价格	2M-BIT [256K x 8] CMOS FLASH MEMORY
MX29F002TTI-12	Macronix	获取价格	2M-BIT [256K x 8] CMOS FLASH MEMORY
MX29F002TTI-70	Macronix	获取价格	2M-BIT [256K x 8] CMOS FLASH MEMORY
MX29F002TTI-90	Macronix	获取价格	2M-BIT [256K x 8] CMOS FLASH MEMORY
MX29F004B	Macronix	获取价格	4M-BIT [512KX8] CMOS FLASH MEMORY
MX29F004BPC-12	Macronix	获取价格	Flash, 512KX8, 120ns, PDIP32, 0.600 INCH, PLASTIC, DIP-32
MX29F004BPC-55	Macronix	获取价格	Flash, 512KX8, 55ns, PDIP32, 0.600 INCH, PLASTIC, DIP-32
MX29F004BPC-70	Macronix	获取价格	Flash, 512KX8, 70ns, PDIP32, 0.600 INCH, PLASTIC, DIP-32
MX29F004BPC-90	ETC	获取价格	x8 Flash EEPROM

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