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MX29F002TPC-90G PDF预览

MX29F002TPC-90G

更新时间: 2024-11-03 04:58:07
品牌 Logo 应用领域
旺宏电子 - Macronix 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
51页 609K
描述
2M-BIT [256K x 8] CMOS FLASH MEMORY

MX29F002TPC-90G 数据手册

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MX29F002/002N T/B  
2M-BIT [256K x 8] CMOS FLASH MEMORY  
FEATURES  
262,144x 8 only  
-Datapolling&Togglebitfordetectionofprogramand  
erase cycle completion.  
Fast access time: 55/70/90/120ns  
Lowpowerconsumption  
Sectorprotection  
- 30mA maximum active current(5MHz)  
- 1uA typical standby current  
- Hardware method to disable any combination of  
sectors from program or erase operations  
-Sectorprotect/unprotectfor5Vonlysystemor5V/12V  
system  
Programming and erasing voltage 5V ± 10%  
Commandregisterarchitecture  
- Byte Programming (7us typical)  
- Sector Erase (16K-Byte x1, 8K-Byte x 2, 32K-Byte  
x1, and 64K-Byte x 3)  
100,000minimumerase/programcycles  
Latch-up protected to 100mA from -1 to VCC+1V  
Boot Code Sector Architecture  
- T = Top Boot Sector  
Auto Erase (chip & sector) and Auto Program  
-Automaticallyeraseanycombinationofsectorsorthe  
whole chip with Erase Suspend capability.  
-Automaticallyprogramsandverifiesdataatspecified  
address  
- B = Bottom Boot Sector  
HardwareRESETpin(onlyfor29F002T/B)  
- Resets internal state machine to read mode  
Low VCC write inhibit is equal to or less than 3.2V  
Package type:  
EraseSuspend/EraseResume  
- Suspends an erase operation to read data from, or  
programdatato,asectorthatisnotbeingerased,then  
resumestheeraseoperation.  
- 32-pin PDIP  
-32-pinPLCC  
- 32-pin TSOP (Type 1)  
Status Reply  
20 years data retention  
GENERAL DESCRIPTION  
MXIC'sFlashtechnologyreliablystoresmemorycontents  
even after 100,000 erase and program cycles. The MXIC  
cell is designed to optimize the erase and programming  
mechanisms. In addition, the combination of advanced  
tunnel oxide processing and low internal electric fields for  
erase and programming operations produces reliable  
cycling. The MX29F002T/B uses a 5.0V ± 10% VCC  
supply to perform the High Reliability Erase and auto  
Program/Erasealgorithms.  
The MX29F002T/B is a 2-mega bit Flash memory organ-  
ized as 256K bytes of 8 bits only. MXIC's Flash memories  
offer the most cost-effective and reliable read/write non-  
volatile random access memory. The MX29F002T/B is  
packaged in 32-pin PDIP,PLCC and 32-pin TSOP(I). It is  
designedtobereprogrammedanderasedin-systemorin-  
standardEPROMprogrammers.  
ThestandardMX29F002T/Boffersaccesstimeasfastas  
55ns, allowing operation of high-speed microprocessors  
without wait states. To eliminate bus contention, the  
MX29F002T/B has separate chip enable (CE) and output  
enable(OE)controls.  
Thehighestdegreeoflatch-upprotectionisachievedwith  
MXIC'sproprietarynon-epiprocess. Latch-upprotectionis  
proved for stresses up to 100 milliamps on address and  
data pin from -1V to VCC + 1V.  
MXIC's Flash memories augment EPROM functionality  
with in-circuit electrical erasure and programming. The  
MX29F002T/B uses a command register to manage this  
functionality. Thecommandregisterallowsfor100%TTL  
level control inputs and fixed power supply levels during  
erase and programming, while maintaining maximum  
EPROM compatibility.  
REV. 1.5, MAR. 28, 2005  
P/N: PM0547  
1

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