Datasheet > 存储 > 闪存> MX29F002NBPC-90

MX29F002NBPC-90

更新时间： 2024-11-30 22:29:11

品牌	Logo	应用领域
旺宏电子 - Macronix		闪存存储内存集成电路光电二极管
页数	文件大小	规格书
49页	910K
描述
2M-BIT [256K x 8] CMOS FLASH MEMORY

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中文翻译

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MX29F002NBPC-90 数据手册

MX29F002/002N

2M-BIT [256K x 8] CMOS FLASH MEMORY

FEATURES

•

262,144x 8 only

Fast access time: 55/70/90/120ns

Lowpowerconsumption

-Datapolling&Togglebitfordetectionofprogramand

erase cycle completion.

Sector protection

•

- 30mA maximum active current(5MHz)

- 1uA typical standby current

Programming and erasing voltage 5V ± 10%

Command register architecture

- Hardware method to disable any combination of

sectors from program or erase operations

- Sector protect/unprotect for 5V only system or 5V/

12V system

•

- Byte Programming (7us typical)

- Sector Erase (16K-Byte x1, 8K-Byte x 2, 32K-Byte

x1, and 64K-Byte x 3)

Auto Erase (chip & sector) and Auto Program

-Automaticallyeraseanycombinationofsectorsorthe

whole chip with Erase Suspend capability.

-Automaticallyprogramsandverifiesdataatspecified

address

•

100,000minimumerase/programcycles

Latch-up protected to 100mA from -1 to VCC+1V

Boot Code Sector Architecture

- T = Top Boot Sector

•

- B = Bottom Boot Sector

•

HardwareRESETpin(onlyfor29F002T/B)

- Resets internal state machine to read mode

Low VCC write inhibit is equal to or less than 3.2V

Package type:

•

Erase Suspend/Erase Resume

- Suspends an erase operation to read data from, or

programdatato,asectorthatisnotbeingerased,then

resumes the erase operation.

- 32-pin PDIP

- 32-pin PLCC

- 32-pin TSOP (Type 1)

20 years data retention

Status Reply

•

GENERAL DESCRIPTION

MXIC'sFlashtechnologyreliablystoresmemorycontents

even after 100,000 erase and program cycles. The MXIC

cell is designed to optimize the erase and programming

mechanisms. In addition, the combination of advanced

tunnel oxide processing and low internal electric fields for

erase and programming operations produces reliable

cycling. The MX29F002T/B uses a 5.0V ± 10% VCC

supply to perform the High Reliability Erase and auto

Program/Erase algorithms.

The MX29F002T/B is a 2-mega bit Flash memory organ-

ized as 256K bytes of 8 bits only. MXIC's Flash memories

offer the most cost-effective and reliable read/write non-

volatile random access memory. The MX29F002T/B is

packaged in 32-pin PDIP,PLCC and 32-pin TSOP(I). It is

designedtobereprogrammedanderasedin-systemorin-

standard EPROM programmers.

ThestandardMX29F002T/Boffersaccesstimeasfastas

55ns, allowing operation of high-speed microprocessors

without wait states. To eliminate bus contention, the

MX29F002T/B has separate chip enable (CE) and output

enable (OE) controls.

Thehighestdegreeoflatch-upprotectionisachievedwith

MXIC's proprietary non-epi process. Latch-up protection

is proved for stresses up to 100 milliamps on address and

data pin from -1V to VCC + 1V.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29F002T/B uses a command register to manage this

functionality. Thecommandregisterallowsfor100%TTL

level control inputs and fixed power supply levels during

erase and programming, while maintaining maximum

EPROM compatibility.

REV. 1.1, JUN. 14, 2001

P/N: PM0547

12 3 4 5 6 7...49

中文翻译

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与MX29F002NBPC-90相关器件

型号	品牌	获取价格	描述	数据表
MX29F002NBPC-90G	Macronix	获取价格	Flash, 256KX8, 90ns, PDIP32, 0.600 INCH, LEAD FREE, PLASTIC, DIP-32
MX29F002NBPI-12	Macronix	获取价格	2M-BIT [256K x 8] CMOS FLASH MEMORY
MX29F002NBPI-70	Macronix	获取价格	2M-BIT [256K x 8] CMOS FLASH MEMORY
MX29F002NBPI-90	Macronix	获取价格	2M-BIT [256K x 8] CMOS FLASH MEMORY
MX29F002NBQC-12	Macronix	获取价格	2M-BIT [256K x 8] CMOS FLASH MEMORY
MX29F002NBQC-55	Macronix	获取价格	2M-BIT [256K x 8] CMOS FLASH MEMORY
MX29F002NBQC-70	Macronix	获取价格	2M-BIT [256K x 8] CMOS FLASH MEMORY
MX29F002NBQC-90	Macronix	获取价格	2M-BIT [256K x 8] CMOS FLASH MEMORY
MX29F002NBQC-90G	Macronix	获取价格	Flash, 256KX8, 90ns, PQCC32, LEAD FREE, PLASTIC, MS-016, LCC-32
MX29F002NBQI-12	Macronix	获取价格	2M-BIT [256K x 8] CMOS FLASH MEMORY

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