MX26LV800T/B
Macronix NBitTM Memory Family
8M-BIT[1Mx8/512Kx16]CMOSSINGLEVOLTAGE
3V ONLY HIGH SPEED eLiteFlashTM MEMORY
FEATURES
• Extended single - supply voltage range 3.0V to 3.6V
• 1,048,576 x 8/524,288 x 16 switchable
• Singlepowersupplyoperation
• Status Reply
- Data# polling & Toggle bit for detection of program
anderaseoperationcompletion.
• Ready/Busy# pin (RY/BY#)
-Providesahardwaremethodofdetectingprogramor
eraseoperationcompletion.
- 3.0V only operation for read, erase and program
operation
• Fast access time: 55/70ns
• Lowpowerconsumption
• 2,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Boot Sector Architecture
- 30mA maximum active current
- 30uA typical standby current
• Commandregisterarchitecture
- Byte/word Programming (55us/70us typical)
- Sector Erase (Sector structure 16K-Bytex1,
8K-Bytex2, 32K-Bytex1, and 64K-Byte x15)
• Auto Erase (chip & sector) and Auto Program
-Automaticallyeraseanycombinationofsectorswith
Erase verify capability.
- T = Top Boot Sector
- B = Bottom Boot Sector
• Package type:
- 48-pin TSOP
- 48-ball CSP
• Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
- Automatically program and verify data at specified
address
• 20 years data retention
GENERAL DESCRIPTION
The MX26LV800T/B is a 8-mega bit high speed Flash
memory organized as 1M bytes of 8 bits or 512K words
of 16 bits. MXIC's high speed Flash memories offer the
most cost-effective and reliable read/write non-volatile
random access memory. The MX26LV800T/B is pack-
aged in 48-pinTSOP, and 48-ball CSP. It is designed to
be reprogrammed and erased in system or in standard
EPROM programmers.
for 100% TTL level control inputs and fixed power sup-
ply levels during erase and programming, while main-
taining maximum EPROM compatibility.
MXIC high speed Flash technology reliably stores
memory contents even after 2,000 erase and program
cycles. The MXIC cell is designed to optimize the erase
and programming mechanisms. In addition, the combi-
nation of advanced tunnel oxide processing and low in-
ternal electric fields for erase and program operations
produces reliable cycling. The MX26LV800T/B uses a
3.0V~3.6V VCC supply to perform the High Reliability
Erase and auto Program/Erase algorithms.
The standard MX26LV800T/B offers access time as fast
as 55ns, allowing operation of high-speed microproces-
sors without wait states. To eliminate bus contention,
the MX26LV800T/B has separate chip enable (CE#) and
output enable (OE#) controls.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamperes on
address and data pin from -1V to VCC + 1V.
MXIC's high speed Flash memories augment EPROM
functionality with in-circuit electrical erasure and program-
ming. The MX26LV800T/B uses a command register to
manage this functionality. The command register allows
P/N:PM1007
REV. 1.3, APR. 13, 2005
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