Datasheet > 存储 > 闪存> MX26LV800ATXEC-70G

MX26LV800ATXEC-70G

更新时间： 2024-11-26 04:38:35

品牌	Logo	应用领域
旺宏电子 - Macronix		闪存存储内存集成电路
页数	文件大小	规格书
50页	559K
描述
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MX26LV800ATXEC-70G 数据手册

浏览型号MX26LV800ATXEC-70G的Datasheet PDF文件第2页

浏览型号MX26LV800ATXEC-70G的Datasheet PDF文件第3页

浏览型号MX26LV800ATXEC-70G的Datasheet PDF文件第4页

浏览型号MX26LV800ATXEC-70G的Datasheet PDF文件第5页

浏览型号MX26LV800ATXEC-70G的Datasheet PDF文件第6页

浏览型号MX26LV800ATXEC-70G的Datasheet PDF文件第7页

MX26LV800AT/AB

Macronix NBit^TMMemory Family

8M-BIT[1Mx8/512Kx16]CMOSSINGLEVOLTAGE

3V ONLY HIGH SPEED eLiteFlash^TMMEMORY

FEATURES

• Extended single - supply voltage range 3.0V to 3.6V

• 1,048,576 x 8/524,288 x 16 switchable

• Singlepowersupplyoperation

anderaseoperationcompletion

• Ready/Busy# pin (RY/BY#)

-Providesahardwaremethodofdetectingprogramor

- 3.0V only operation for read, erase and program

operation

eraseoperationcompletion

• CFI (Common Flash Interface) compliant

- Flash device parameters stored on the device and

provide the host system to access

• Fast access time: 55/70ns

• Lowpowerconsumption

• 2,000 minimum erase/program cycles

• Latch-up protected to 100mA from -1V to VCC+1V

• Boot Sector Architecture

- T = Top Boot Sector

- 30mA maximum active current

- 30uA typical standby current

• Commandregisterarchitecture

- Byte/word Programming (55us/70us typical)

- Sector Erase (Sector structure 16K-Bytex1,

8K-Bytex2, 32K-Bytex1, and 64K-Byte x15)

• Auto Erase (chip & sector) and Auto Program

-Automaticallyeraseanycombinationofsectorswith

Erase verify capability.

- B = Bottom Boot Sector

• Package type:

- 48-pin TSOP

- 48-ball CSP

• Compatibility with JEDEC standard

- Pinout and software compatible with single-power

supply Flash

- Automatically program and verify data at specified

address

• 20 years data retention

• Status Reply

- Data# polling & Toggle bit for detection of program

GENERAL DESCRIPTION

The MX26LV800AT/AB is a 8-mega bit high speed Flash

memory organized as 1M bytes of 8 bits or 512K words

of 16 bits. MXIC's high speed Flash memories offer the

most cost-effective and reliable read/write non-volatile

random access memory. The MX26LV800AT/AB is pack-

aged in 48-pinTSOP, and 48-ball CSP. It is designed to

be reprogrammed and erased in system or in standard

EPROM programmers.

lows for 100% TTL level control inputs and fixed power

supply levels during erase and programming, while main-

taining maximum EPROM compatibility.

MXIC high speed Flash technology reliably stores

memory contents even after 2,000 erase and program

cycles. The MXIC cell is designed to optimize the erase

and programming mechanisms. In addition, the combi-

nation of advanced tunnel oxide processing and low in-

ternal electric fields for erase and program operations

produces reliable cycling. The MX26LV800AT/AB uses

a 3.0V~3.6VVCC supply to perform the High Reliability

Erase and auto Program/Erase algorithms.

The standard MX26LV800AT/AB offers access time as

fast as 55ns, allowing operation of high-speed micropro-

cessors without wait states. To eliminate bus conten-

tion, the MX26LV800AT/AB has separate chip enable

(CE#) and output enable (OE#) controls.

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up pro-

tection is proved for stresses up to 100 milliamperes on

address and data pin from -1V to VCC + 1V.

MXIC's high speed Flash memories augment EPROM

functionality with in-circuit electrical erasure and program-

ming. The MX26LV800AT/AB uses a command register

to manage this functionality. The command register al-

P/N:PM1128

REV. 1.1, MAR. 28, 2005

12 3 4 5 6 7...50

中文翻译

下载PDF

与MX26LV800ATXEC-70G相关器件

型号	品牌	获取价格	描述	数据表
MX26LV800B	Macronix	获取价格	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV800BTC-55	Macronix	获取价格	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV800BTC-55G	Macronix	获取价格	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV800BTC-70	Macronix	获取价格	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV800BTC-70G	Macronix	获取价格	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV800BXBC-55	Macronix	获取价格	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV800BXBC-55G	Macronix	获取价格	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV800BXBC-70	Macronix	获取价格	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV800BXBC-70G	Macronix	获取价格	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV800BXEC-55	Macronix	获取价格	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY

与MX26LV800ATXEC-70G相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

45
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

34
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

62
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

59

产品中心

服务支持

精选活动

关于我们

帮助中心

MX26LV800ATXEC-70G

MX26LV800ATXEC-70G 数据手册

与MX26LV800ATXEC-70G相关器件

与MX26LV800ATXEC-70G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MX26LV800ATXEC-70G

MX26LV800ATXEC-70G 数据手册

与MX26LV800ATXEC-70G相关器件

与MX26LV800ATXEC-70G相关文章

您还可以找

您在本页遇到什么问题？