Datasheet > 存储 > 闪存> MX26LV400TXBC-70

MX26LV400TXBC-70

更新时间： 2024-11-23 04:38:35

品牌	Logo	应用领域
旺宏电子 - Macronix		闪存存储内存集成电路
页数	文件大小	规格书
46页	550K
描述
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY

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MX26LV400TXBC-70 数据手册

MX26LV400

Macronix NBit^TMMemory Family

4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE

3V ONLY BOOT SECTOR HIGH SPEED eLiteFlash^TMMEMORY

FEATURES

• Extended single - supply voltage range 3.0V to 3.6V

• 524,288 x 8/262,144 x 16 switchable

• Singlepowersupplyoperation

• Status Reply

- Data# polling & Toggle bit for detection of program

anderaseoperationcompletion.

• Ready/Busy# pin (RY/BY#)

-Providesahardwaremethodofdetectingprogramor

eraseoperationcompletion.

- 3.0V only operation for read, erase and program

operation

• Fast access time: 55/70ns

• Lowpowerconsumption

• 2,000 minimum erase/program cycles

• Latch-up protected to 100mA from -1V to VCC+1V

• Boot Sector Architecture

- 30mA maximum active current

- 30uA typical standby current

• Commandregisterarchitecture

-Byte/wordProgramming(typical)

- Sector Erase (Sector structure 16K-Bytex1,

8K-Bytex2, 32K-Bytex1, and 64K-Byte x7)

• Auto Erase (chip & sector) and Auto Program

-Automaticallyeraseanycombinationofsectorswith

Erase verify capability.

- T = Top Boot Sector

- B = Bottom Boot Sector

• Package type:

- 48-pin TSOP

- 48-ball CSP

• Compatibility with JEDEC standard

- Pinout and software compatible with single-power

supply Flash

- Automatically program and verify data at specified

address

• 20 years data retention

GENERAL DESCRIPTION

The MX26LV400 is a 4-mega bit high speed Flash memory

organized as 512K bytes of 8 bits or 256K words of 16

bits. MXIC's high speed Flash memories offer the most

cost-effective and reliable read/write non-volatile random

access memory. The MX26LV400 is packaged in 48-pin

TSOP, and 48-ball CSP. It is designed to be repro-

grammed and erased in system or in standard EPROM

programmers.

for 100% TTL level control inputs and fixed power sup-

ply levels during erase and programming, while main-

taining maximum EPROM compatibility.

MXIC high speed Flash technology reliably stores

memory contents even after 2,000 erase and program

cycles. The MXIC cell is designed to optimize the erase

and programming mechanisms. In addition, the combi-

nation of advanced tunnel oxide processing and low in-

ternal electric fields for erase and program operations

produces reliable cycling. The MX26LV400 uses a

3.0V~3.6V VCC supply to perform the High Reliability

Erase and auto Program/Erase algorithms.

The standard MX26LV400 offers access time as fast as

55ns, allowing operation of high-speed microprocessors

without wait states. To eliminate bus contention, the

MX26LV400 has separate chip enable (CE#) and output

enable (OE#) controls.

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up pro-

tection is proved for stresses up to 100 milliamperes on

address and data pin from -1V to VCC + 1V.

MXIC's high speed Flash memories augment EPROM

functionality with in-circuit electrical erasure and program-

ming. The MX26LV400 uses a command register to

manage this functionality. The command register allows

P/N:PM1094

REV. 1.0, NOV. 08, 2004

12 3 4 5 6 7...46

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与MX26LV400TXBC-70相关器件

型号	品牌	获取价格	描述	数据表
MX26LV400TXBC-70G	Macronix	获取价格	4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM ME
MX26LV400TXEC-55	Macronix	获取价格	4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM ME
MX26LV400TXEC-55G	Macronix	获取价格	4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM ME
MX26LV400TXEC-70	Macronix	获取价格	4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM ME
MX26LV400TXEC-70G	Macronix	获取价格	4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM ME
MX26LV800AB	Macronix	获取价格	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV800ABTC-55	Macronix	获取价格	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV800ABTC-55G	Macronix	获取价格	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV800ABTC-70	Macronix	获取价格	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV800ABTC-70G	Macronix	获取价格	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY

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