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MX26LV400BXEC-70G PDF预览

MX26LV400BXEC-70G

更新时间: 2024-11-23 04:38:35
品牌 Logo 应用领域
旺宏电子 - Macronix /
页数 文件大小 规格书
46页 550K
描述
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY

MX26LV400BXEC-70G 数据手册

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MX26LV400  
Macronix NBitTM Memory Family  
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE  
3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY  
FEATURES  
• Extended single - supply voltage range 3.0V to 3.6V  
• 524,288 x 8/262,144 x 16 switchable  
• Singlepowersupplyoperation  
• Status Reply  
- Data# polling & Toggle bit for detection of program  
anderaseoperationcompletion.  
• Ready/Busy# pin (RY/BY#)  
-Providesahardwaremethodofdetectingprogramor  
eraseoperationcompletion.  
- 3.0V only operation for read, erase and program  
operation  
• Fast access time: 55/70ns  
• Lowpowerconsumption  
• 2,000 minimum erase/program cycles  
• Latch-up protected to 100mA from -1V to VCC+1V  
• Boot Sector Architecture  
- 30mA maximum active current  
- 30uA typical standby current  
• Commandregisterarchitecture  
-Byte/wordProgramming(typical)  
- Sector Erase (Sector structure 16K-Bytex1,  
8K-Bytex2, 32K-Bytex1, and 64K-Byte x7)  
• Auto Erase (chip & sector) and Auto Program  
-Automaticallyeraseanycombinationofsectorswith  
Erase verify capability.  
- T = Top Boot Sector  
- B = Bottom Boot Sector  
• Package type:  
- 48-pin TSOP  
- 48-ball CSP  
• Compatibility with JEDEC standard  
- Pinout and software compatible with single-power  
supply Flash  
- Automatically program and verify data at specified  
address  
• 20 years data retention  
GENERAL DESCRIPTION  
The MX26LV400 is a 4-mega bit high speed Flash memory  
organized as 512K bytes of 8 bits or 256K words of 16  
bits. MXIC's high speed Flash memories offer the most  
cost-effective and reliable read/write non-volatile random  
access memory. The MX26LV400 is packaged in 48-pin  
TSOP, and 48-ball CSP. It is designed to be repro-  
grammed and erased in system or in standard EPROM  
programmers.  
for 100% TTL level control inputs and fixed power sup-  
ply levels during erase and programming, while main-  
taining maximum EPROM compatibility.  
MXIC high speed Flash technology reliably stores  
memory contents even after 2,000 erase and program  
cycles. The MXIC cell is designed to optimize the erase  
and programming mechanisms. In addition, the combi-  
nation of advanced tunnel oxide processing and low in-  
ternal electric fields for erase and program operations  
produces reliable cycling. The MX26LV400 uses a  
3.0V~3.6V VCC supply to perform the High Reliability  
Erase and auto Program/Erase algorithms.  
The standard MX26LV400 offers access time as fast as  
55ns, allowing operation of high-speed microprocessors  
without wait states. To eliminate bus contention, the  
MX26LV400 has separate chip enable (CE#) and output  
enable (OE#) controls.  
The highest degree of latch-up protection is achieved  
with MXIC's proprietary non-epi process. Latch-up pro-  
tection is proved for stresses up to 100 milliamperes on  
address and data pin from -1V to VCC + 1V.  
MXIC's high speed Flash memories augment EPROM  
functionality with in-circuit electrical erasure and program-  
ming. The MX26LV400 uses a command register to  
manage this functionality. The command register allows  
P/N:PM1094  
REV. 1.0, NOV. 08, 2004  
1

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