Datasheet > 存储 > 闪存> MX26L3220XBI-12

MX26L3220XBI-12

更新时间： 2024-11-21 22:12:15

品牌	Logo	应用领域
旺宏电子 - Macronix		闪存存储内存集成电路可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
38页	1135K
描述
32M-BIT [2M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM

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中文翻译

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MX26L3220XBI-12 数据手册

ADVANCED INFORMATION

MX26L3220

32M-BIT[2Mx16]CMOS

MULTIPLE-TIME-PROGRAMMABLEEPROM

FEATURES

• 2,097,152 x 16 byte structure

• Single Power Supply Operation

- 2.7 to 3.6 volt for read, erase, and program

operations

• Status Reply

- Data polling & Toggle bits provide detection of

programanderaseoperationcompletion

• 12V ACC input pin provides accelerated program

capability

• Low Vcc write inhibit is equal to or less than 2.5V

• Compatible with JEDEC standard

• HighPerformance

- Fast access time: 90/120ns (typ.)

- Fast program time: 70s/chip (typ.)

- Fast erase time: 90s/chip (typ.)

• LowPowerConsumption

• Output voltages and input voltages on the device is

deterined by the voltage on the VI/O pin.

- VI/O voltage range:1.65V~3.6V

• 10 years data retention

• Package

- 44-Pin SOP

- Low active read current: 17mA (typ.) at 5MHz

- Low standby current: 30uA (typ.)

• Minimum 100 erase/program cycle

- 48-Pin TSOP

- 48-Ball CSP

GENERAL DESCRIPTION

The MX26L3220 is a 32M bit MTP EPROM^TMorganized

as 2M bytes of 16 bits. MXIC's MTP EPROM^TMoffer the

most cost-effective and reliable read/write non-volatile

randomaccessmemory.TheMX26L3220ispackagedin

44-pinSOP,48-pinTSOPand48-ballCSP.Itisdesigned

tobereprogrammedanderasedinsystemorinstandard

EPROMprogrammers.

MXIC's MTP EPROM^TMtechnology reliably stores

memory contents even after 100 erase and program

cycles. The MXIC cell is designed to optimize the erase

andprogrammechanisms.Inaddition,thecombinationof

advanced tunnel oxide processing and low internal

electric fields for erase and programming operations

produces reliable cycling.

The standard MX26L3220 offers access time as fast as

90ns,allowingoperationofhigh-speedmicroprocessors

without wait states. To eliminate bus contention, the

MX26L3220 has separate chip enable (CE) and output

enable OE controls. MXIC's MTP EPROM^TMaugment

EPROMfunctionalitywithin-circuitelectricalerasureand

programming.TheMX26L3220usesacommandregister

to manage this functionality.

The MX26L3220 uses a 2.7V to 3.6V VCC supply to

perform the High Reliability Erase and auto Program/

Erasealgorithms.

Thehighestdegreeoflatch-upprotectionisachievedwith

MXIC'sproprietarynon-epiprocess.Latch-upprotection

isprovedforstressesupto100milliampsonaddressand

data pin from -1V to VCC +1V.

P/N:PM0826

REV. 0.5, JAN. 29, 2002

12 3 4 5 6 7...38

中文翻译

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与MX26L3220XBI-12相关器件

型号	品牌	获取价格	描述	数据表
MX26L3220XBI-90	Macronix	获取价格	32M-BIT [2M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM
MX26L6411TC-10	Macronix	获取价格	EEPROM
MX26L6413TC-12	Macronix	获取价格	Flash, 4MX16, 120ns, PDSO48, 12 X 20 MM, PLASTIC, MO-142, TSOP1-48
MX26L6413TC-90	Macronix	获取价格	Flash, 4MX16, 90ns, PDSO48, 12 X 20 MM, PLASTIC, MO-142, TSOP1-48
MX26L6413TI-90	Macronix	获取价格	Flash, 4MX16, 90ns, PDSO48, 12 X 20 MM, PLASTIC, MO-142, TSOP1-48
MX26L6413XBC-90	Macronix	获取价格	Flash, 4MX16, 90ns, PBGA63, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, PLASTIC, MO-210, CSP
MX26L6413XBI-12	Macronix	获取价格	Flash, 4MX16, 120ns, PBGA63, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, PLASTIC, MO-210, CS
MX26L6413XBI-90	Macronix	获取价格	Flash, 4MX16, 90ns, PBGA63, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, PLASTIC, MO-210, CSP
MX26L6419	Macronix	获取价格	64M [x16] SINGLE 3V PAGE MODE MTP MEMORY
MX26L6419TC-10	Macronix	获取价格	64M [x16] SINGLE 3V PAGE MODE MTP MEMORY

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