Datasheet > MX26F128J3RBC-15

MX26F128J3RBC-15

更新时间： 2024-11-22 21:18:03

品牌	Logo	应用领域
旺宏电子 - Macronix		光电二极管内存集成电路
页数	文件大小	规格书
53页	1134K
描述
Flash, 8MX16, 150ns, PDSO48, 12 X 20 MM, REVERSE, MO-142, TSOP1-48

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MX26F128J3RBC-15 数据手册

ADVANCED INFORMATION

MX26F128J3

128M[x8/x16] SINGLE3VPAGEMODEMTPMEMORY

FEATURES

• 2.7V to 3.6V operation voltage

• Block Structure

Software Feature

• Support Common Flash Interface (CFI)

- MTP device parameters stored on the device and

provide the host system to access.

• Automation Suspend Options

- Block Erase Suspend to Read

- Block Erase Suspend to Program

- Program Suspend to Read

- 128 x 128Kbyte Erase Blocks

• Fast random / page mode access time

- 150/25 ns Read Access Time

• 128-bit Protection Register

- 64-bit Unique Device Identifier

- 64-bit User Programmable OTP Cells

• 32-Byte Write Buffer

- 6 us/byte Effective Programming Time

Hardware Feature(Not for 48-TSOP/48-RTSOP)

• Enhanced Data Protection Features Absolute Protec-

tion with VPEN = GND

• A0 pin

- Select low byte address when device is in byte mode.

- Flexible Block Locking

Not used in word mode.

• STS pin

- Block Erase/Program Lockout during PowerTransi-

tions

- Indicates the status of the internal state machine.

• VPEN pin

Performance

- For Erase /Program/ Block Lock enable.

• VCCQ Pin

• Low power dissipation

- typical 15mA active current for page mode read

- 80uA/(max.) standby current

- Deep power-down current: 5uA

• High Performance

-The output buffer power supply, control the device 's

output voltage.

Packaging

- Block erase time: 2s typ.

- 48-LeadTSOP

- 48-Lead RTSOP

- 56-LeadTSOP

- 64-ball CSP

- Byte programming time: 210us typ.

- Block programming time: 0.8s typ. (using Write to

Buffer Command)

• Program/Erase Endurance cycles: 100 cycles

Technology

- MX26F128J3 using Nbit (0.25u) MTPTechnology

P/N:PM0960

REV. 0.0, OCT. 30, 2002

12 3 4 5 6 7...53

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