Datasheet > 存储 > 闪存> MX26C2000BQC-90

MX26C2000BQC-90

更新时间： 2024-10-30 22:20:15

品牌	Logo	应用领域
旺宏电子 - Macronix		闪存存储内存集成电路可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
23页	988K
描述
2M-BIT [256K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM

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中文翻译

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MX26C2000BQC-90 数据手册

ADVANCE INFORMATION

MX26C2000B

2M-BIT[256Kx8]CMOS

MULTIPLE-TIME-PROGRAMMABLE-EPROM

FEATURES

• Chip erase time: 1 (typ.)

• Chip program time: 12.5 (typ.)

• 256Kx 8 organization

• Single +5V power supply

• +12Vprogrammingvoltage

• Fast access time:90/100/120/150 ns

• Totally static operation

• Completely TTL compatible

• Operatingcurrent:30mA

• Standby current: 100uA

• 50 minimum erase/program cycles

• Typical fast programming cycle duration 10us/byte

• Package type:

- 32 pin plastic DIP

- 32 pin PLCC

- 32 pin TSOP

- 32 pin SOP

GENERAL DESCRIPTION

The MX26C2000B is a 5V only, 2M-bit, MTP EPROM^TM

(Multiple Time Programmable Read Only Memory). It is

organized as 256K words by 8 bits per word, operates

fromasingle+5volt supply,hasastaticstandby mode,

and features fast single address location programming.

AllprogrammingsignalsareTTLlevels,requiringasingle

pulse. It is design to be programmed and erased by an

EPROM programmer or on-board. The MX26C2000B

supports a intelligent fast programming algorithm which

can result in programming time of less than one minute.

ThisMTPEPROM^TMispackagedinindustrystandard32

pin dual-in-line packages, 32 lead PLCC, 32 lead SOP

and 32 lead TSOP packages.

PIN CONFIGURATIONS

32 PDIP/SOP

32 PLCC

VCC

A17

A14

A13

VPP

A16

A15

A12

A14

A13

A11

A10

MX26C2000B

A11

A10

GND

32 TSOP

PIN DESCRIPTION

SYMBOL

A0~A17

Q0~Q7

PIN NAME

A11

A10

GND

Address Input

DataInput/Output

Chip Enable Input

Output Enable Input

Write Enable Input

A13

A14

A17

VCC

VPP

A16

A15

A12

MX26C2000B

VPP

ProgramSupplyVoltage

NoInternalConnection

Power Supply Pin (+5V)

GroundPin

VCC

GND

P/N: PM0765

REV. 0.7, OCT. 04, 2001

12 3 4 5 6 7...23

中文翻译

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MX26C2000BQC-90 替代型号

型号	品牌	替代类型	描述	数据表
SST27SF020-90-3C-NHE	MICROCHIP	功能相似	256K X 8 FLASH 12V PROM, 90 ns, PQCC32, LEAD FREE, PLASTIC, MO-016AE, LCC-32
AM28F020A-90JC	AMD	功能相似	2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
M28F201-90K6TR	STMICROELECTRONICS	功能相似	2 Mb 256K x 8, Chip Erase FLASH MEMORY

与MX26C2000BQC-90相关器件

型号	品牌	获取价格	描述	数据表
MX26C2000BQI-10	Macronix	获取价格	2M-BIT [256K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM
MX26C2000BQI-12	Macronix	获取价格	2M-BIT [256K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM
MX26C2000BQI-15	Macronix	获取价格	2M-BIT [256K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM
MX26C2000BQI-90	Macronix	获取价格	2M-BIT [256K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM
MX26C2000BTC-10	Macronix	获取价格	2M-BIT [256K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM
MX26C2000BTC-12	Macronix	获取价格	2M-BIT [256K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM
MX26C2000BTC-15	Macronix	获取价格	2M-BIT [256K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM
MX26C2000BTC-90	Macronix	获取价格	2M-BIT [256K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM
MX26C2000BTI-10	Macronix	获取价格	2M-BIT [256K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM
MX26C2000BTI-12	Macronix	获取价格	2M-BIT [256K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM

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