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MX25L3208DPI-12G PDF预览

MX25L3208DPI-12G

更新时间: 2024-11-26 05:21:15
品牌 Logo 应用领域
旺宏电子 - Macronix 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
56页 3301K
描述
EEPROM, 16MX2, Serial, CMOS, PDIP8, 0.300 INCH, ROHS COMPLIANT, PLASTIC, MS-001, DIP-8

MX25L3208DPI-12G 数据手册

 浏览型号MX25L3208DPI-12G的Datasheet PDF文件第2页浏览型号MX25L3208DPI-12G的Datasheet PDF文件第3页浏览型号MX25L3208DPI-12G的Datasheet PDF文件第4页浏览型号MX25L3208DPI-12G的Datasheet PDF文件第5页浏览型号MX25L3208DPI-12G的Datasheet PDF文件第6页浏览型号MX25L3208DPI-12G的Datasheet PDF文件第7页 
MX25L1608D  
MX25L3208D  
MX25L6408D  
16M-BIT [x 1 / x 2] CMOS SERIAL FLASH  
32M-BIT [x 1 / x 2] CMOS SERIAL FLASH  
64M-BIT [x 1 / x 2] CMOS SERIAL FLASH  
FEATURES  
GENERAL  
• Serial Peripheral Interface compatible -- Mode 0 and Mode 3  
16M:16,777,216 x 1 bit structure or 8,388,608 x 2 bits (two I/O read mode) structure  
32M:33,554,432 x 1 bit structure or 16,772,216 x 2 bits (two I/O read mode) structure  
64M:67,108,864 x 1 bit structure or 33,554,432 x 2 bits (two I/O read mode) structure  
• 512 Equal Sectors with 4K byte each (16Mb)  
1024 Equal Sectors with 4K byte each (32Mb)  
2048 Equal Sectors with 4K byte each (64Mb)  
- Any Sector can be erased individually  
• 32 Equal Blocks with 64K byte each (16Mb)  
64 Equal Blocks with 64K byte each (32Mb)  
128 Equal Blocks with 64K byte each (64Mb)  
- Any Block can be erased individually  
• Single Power Supply Operation  
- 2.7 to 3.6 volt for read, erase, and program operations  
• Latch-up protected to 100mA from -1V to Vcc +1V  
PERFORMANCE  
• High Performance  
- Fast access time: 86MHz serial clock  
- Serial clock of two I/O read mode : 50MHz, which is equivalent to 100MHz  
- Fast program time: 1.4ms(typ.) and 5ms(max.)/page (256-byte per page)  
- Byte program time: 9us (typical)  
- Continuously program mode (automatically increase address under word program mode)  
- Fast erase time: 60ms(typ.) /sector (4K-byte per sector) ; 0.7s(typ.) /block (64K-byte per block); 14s(typ.) /chip  
for 16Mb, 25s(typ.) for 32Mb, and 50s(typ.) for 64Mb  
• Low Power Consumption  
- Low active read current: 25mA(max.) at 86MHz, and 10mA(max.) at 33MHz  
- Low active programming current: 20mA (max.)  
- Low active erase current: 20mA (max.)  
- Low standby current: 20uA (max.)  
- Deep power-down mode 1uA (typical)  
• Typical 100,000 erase/program cycles  
• 20 years of data retention  
SOFTWARE FEATURES  
• Input Data Format  
- 1-byte Command code  
• Advanced Security Features  
- Block lock protection  
The BP0-BP3 status bit defines the size of the area to be software protection against program and erase instruc-  
tions  
- Additional 512-bit secured area for unique identifier  
• Auto Erase and Auto Program Algorithm  
Automatically erases and verifies data at selected sector  
Automatically programs and verifies data at selected page by an internal algorithm that automatically times the  
program pulse widths (Any page to be programed should have page in the erased state first)  
-
-
P/N: PM1505  
REV. 1.0, AUG. 28, 2009  
1

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