Datasheet > MX25L3208DM2I-12G

MX25L3208DM2I-12G

更新时间： 2024-10-02 03:04:15

品牌	Logo	应用领域
旺宏电子 - Macronix		可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数	文件大小	规格书
56页	3301K
描述
EEPROM, 16MX2, Serial, CMOS, PDSO8, 0.200 INCH, ROHS COMPLIANT, SOP-8

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MX25L1608D

MX25L3208D

MX25L6408D

16M-BIT [x 1 / x 2] CMOS SERIAL FLASH

32M-BIT [x 1 / x 2] CMOS SERIAL FLASH

64M-BIT [x 1 / x 2] CMOS SERIAL FLASH

FEATURES

GENERAL

• Serial Peripheral Interface compatible -- Mode 0 and Mode 3

• 16M:16,777,216 x 1 bit structure or 8,388,608 x 2 bits (two I/O read mode) structure

32M:33,554,432 x 1 bit structure or 16,772,216 x 2 bits (two I/O read mode) structure

64M:67,108,864 x 1 bit structure or 33,554,432 x 2 bits (two I/O read mode) structure

• 512 Equal Sectors with 4K byte each (16Mb)

1024 Equal Sectors with 4K byte each (32Mb)

2048 Equal Sectors with 4K byte each (64Mb)

- Any Sector can be erased individually

• 32 Equal Blocks with 64K byte each (16Mb)

64 Equal Blocks with 64K byte each (32Mb)

128 Equal Blocks with 64K byte each (64Mb)

- Any Block can be erased individually

• Single Power Supply Operation

- 2.7 to 3.6 volt for read, erase, and program operations

• Latch-up protected to 100mA from -1V to Vcc +1V

PERFORMANCE

• High Performance

- Fast access time: 86MHz serial clock

- Serial clock of two I/O read mode : 50MHz, which is equivalent to 100MHz

- Fast program time: 1.4ms(typ.) and 5ms(max.)/page (256-byte per page)

- Byte program time: 9us (typical)

- Continuously program mode (automatically increase address under word program mode)

- Fast erase time: 60ms(typ.) /sector (4K-byte per sector) ; 0.7s(typ.) /block (64K-byte per block); 14s(typ.) /chip

for 16Mb, 25s(typ.) for 32Mb, and 50s(typ.) for 64Mb

• Low Power Consumption

- Low active read current: 25mA(max.) at 86MHz, and 10mA(max.) at 33MHz

- Low active programming current: 20mA (max.)

- Low active erase current: 20mA (max.)

- Low standby current: 20uA (max.)

- Deep power-down mode 1uA (typical)

• Typical 100,000 erase/program cycles

• 20 years of data retention

SOFTWARE FEATURES

• Input Data Format

- 1-byte Command code

• Advanced Security Features

- Block lock protection

The BP0-BP3 status bit deﬁnes the size of the area to be software protection against program and erase instruc-

tions

- Additional 512-bit secured area for unique identiﬁer

• Auto Erase and Auto Program Algorithm

Automatically erases and veriﬁes data at selected sector

Automatically programs and veriﬁes data at selected page by an internal algorithm that automatically times the

program pulse widths (Any page to be programed should have page in the erased state ﬁrst)

P/N: PM1505

REV. 1.0, AUG. 28, 2009

12 3 4 5 6 7...56

中文翻译

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与MX25L3208DM2I-12G相关器件

型号	品牌	获取价格	描述	数据表
MX25L3208DMI-12G	Macronix	获取价格	EEPROM, 16MX2, Serial, CMOS, PDSO16, 0.300 INCH, ROHS COMPLIANT, MS-013, SOP-16
MX25L3208DPI-12G	Macronix	获取价格	EEPROM, 16MX2, Serial, CMOS, PDIP8, 0.300 INCH, ROHS COMPLIANT, PLASTIC, MS-001, DIP-8
MX25L3208DZUI-12G	Macronix	获取价格	EEPROM, 16MX2, Serial, CMOS, PDSO8, 4 X 4 MM, 0.60 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIAN
MX25L3208E	Macronix	获取价格	32M-BIT [x 1 / x 2] CMOS SERIAL FLASH
MX25L3208EM2I12G	Macronix	获取价格	32M-BIT [x 1 / x 2] CMOS SERIAL FLASH
MX25L3208EZNI12G	Macronix	获取价格	32M-BIT [x 1 / x 2] CMOS SERIAL FLASH
MX25L3225D	Macronix	获取价格	32M-BIT [x 1/x 2/x 4] CMOS SERIAL FLASH
MX25L3225D_14	Macronix	获取价格	32M-BIT [x 1/x 2/x4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY
MX25L3225DM2I10G	Macronix	获取价格	32M-BIT [x 1/x 2/x4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY
MX25L3225DM2I-10G	Macronix	获取价格	32M-BIT [x 1/x 2/x 4] CMOS SERIAL FLASH

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