Datasheet > 存储 > 闪存> MX25L3205DZNI-12G

MX25L3205DZNI-12G

更新时间： 2024-11-25 05:51:39

品牌	Logo	应用领域
旺宏电子 - Macronix		闪存存储内存集成电路光电二极管时钟
页数	文件大小	规格书
56页	994K
描述
16M-BIT [x 1 / x 2] CMOS SERIAL FLASH

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中文翻译

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数据手册

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MX25L1605D

MX25L3205D

MX25L6405D

16M-BIT [x 1 / x 2] CMOS SERIAL FLASH

32M-BIT [x 1 / x 2] CMOS SERIAL FLASH

64M-BIT [x 1 / x 2] CMOS SERIAL FLASH

FEATURES

GENERAL

• Serial Peripheral Interface compatible -- Mode 0 and Mode 3

• 16M:16,777,216 x 1 bit structure or 8,388,608 x 2 bits (two I/O read mode) structure

32M:33,554,432 x 1 bit structure or 16,772,216 x 2 bits (two I/O read mode) structure

64M:67,108,864 x 1 bit structure or 33,554,432 x 2 bits (two I/O read mode) structure

• 512 Equal Sectors with 4K byte each (16Mb)

1024 Equal Sectors with 4K byte each (32Mb)

2048 Equal Sectors with 4K byte each (64Mb)

- Any Sector can be erased individually

• 32 Equal Blocks with 64K byte each (16Mb)

64 Equal Blocks with 64K byte each (32Mb)

128 Equal Blocks with 64K byte each (64Mb)

- Any Block can be erased individually

• Single Power Supply Operation

- 2.7 to 3.6 volt for read, erase, and program operations

• Latch-up protected to 100mA from -1V to Vcc +1V

• Low Vcc write inhibit is from 1.5V to 2.5V

PERFORMANCE

• High Performance

- Fast access time: 86MHz serial clock (15pF + 1TTL Load) and 66MHz serial clock (30pF + 1TTL Load)

- Serial clock of two I/O read mode : 50MHz (15pF + TTL Load), which is equivalent to 100MHz

- Fast program time: 1.4ms(typ.) and 5ms(max.)/page (256-byte per page)

- Byte program time: 9us (typical)

-Continuouslyprogrammode(automaticallyincreaseaddressunderwordprogrammode)

- Fast erase time: 60ms(typ.) /sector (4K-byte per sector) ; 0.7s(typ.) /block (64K-byte per block); 14s(typ.) /chip for

16Mb, 25s(typ.) for 32Mb, and 50s(typ.) for 64Mb

• Low Power Consumption

- Low active read current: 25mA(max.) at 86MHz, 20mA(max.) at 66MHz and 10mA(max.) at 33MHz

- Low active programming current: 20mA (max.)

- Low active erase current: 20mA (max.)

- Low standby current: 20uA (max.)

-Deeppower-downmode1uA(typical)

• Typical 100,000 erase/program cycles

SOFTWAREFEATURES

• Input Data Format

- 1-byte Command code

• Advanced Security Features

- Block lock protection

The BP0-BP3 status bit defines the size of the area to be software protection against program and erase instructions

- Additional 512-bit secured OTP for unique identifier

• Auto Erase and Auto Program Algorithm

- Automatically erases and verifies data at selected sector

- Automatically programs and verifies data at selected page by an internal algorithm that automatically times the

program pulse widths (Any page to be programed should have page in the erased state first)

P/N:PM1290

REV. 1.4, OCT. 01, 2008

12 3 4 5 6 7...56

中文翻译

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与MX25L3205DZNI-12G相关器件

型号	品牌	获取价格	描述	数据表
MX25L3205DZUI-12G	Macronix	获取价格	16M-BIT [x 1 / x 2] CMOS SERIAL FLASH
MX25L3205MC-20	Macronix	获取价格	32M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY
MX25L3205MC-20G	Macronix	获取价格	32M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY
MX25L3205MI-20	Macronix	获取价格	32M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY
MX25L3205MI-20G	Macronix	获取价格	32M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY
MX25L3206E	Macronix	获取价格	DATASHEET
MX25L3206EM2	Macronix	获取价格	32M-BIT [x 1 / x 2] CMOS SERIAL FLASH
MX25L3206EM2I12G	Macronix	获取价格	32M-BIT [x 1 / x 2] CMOS SERIAL FLASH
MX25L3206EM2I-12G	Macronix	获取价格	Flash, 16MX2, PDSO8, 0.200 INCH, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
MX25L3206EMI12G	Macronix	获取价格	32M-BIT [x 1 / x 2] CMOS SERIAL FLASH

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