Datasheet > 存储 > 闪存> MX25L2005ZNI-12G

MX25L2005ZNI-12G

更新时间： 2024-11-21 05:51:39

品牌	Logo	应用领域
旺宏电子 - Macronix		闪存存储内存集成电路光电二极管时钟
页数	文件大小	规格书
40页	548K
描述
2M-BIT [x 1] CMOS SERIAL FLASH

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中文翻译

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数据手册

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MX25L2005ZNI-12G 数据手册

MX25L2005

2M-BIT [x 1] CMOS SERIAL FLASH

FEATURES

GENERAL

• Serial Peripheral Interface (SPI) compatible -- Mode 0 and Mode 3

• 2,097,152 x 1 bit structure

• 64 Equal Sectors with 4K byte each

- Any Sector can be erased individually

• 4 Equal Blocks with 64K byte each

- Any Block can be erased individually

• Single Power Supply Operation

- 2.7 to 3.6 volt for read, erase, and program operations

• Latch-up protected to 100mA from -1V to Vcc +1V

• Low Vcc write inhibit is from 1.5V to 2.5V

PERFORMANCE

• High Performance

- Fast access time: 85MHz serial clock (15pF + 1TTL Load) and 66MHz serial clock (30pF + 1TTL Load)

- Fast program time: 1.4ms(typ.) and 5ms(max.)/page (256-byte per page)

-Fasterasetime:60ms(typ.)and120ms(max.)/sector(4K-bytepersector);1s(typ.)and2s(max.)/block(64K-byteper

block)

• Low Power Consumption

- Low active read current: 12mA(max.) at 85MHz, 8mA(max.) at 66MHz and 4mA(max.) at 33MHz

- Low active programming current: 15mA (max.)

- Low active erase current: 15mA (max.)

- Low standby current: 10uA (max.)

-Deeppower-downmode1uA(typical)

• Minimum 100,000 erase/program cycles

SOFTWAREFEATURES

• Input Data Format

- 1-byte Command code

• Block Lock protection

-TheBP0~BP1statusbitdefinesthesizeoftheareatobesoftwareprotectedagainstProgramandEraseinstructions

• Auto Erase and Auto Program Algorithm

- Automatically erases and verifies data at selected sector

- Automatically programs and verifies data at selected page by an internal algorithm that automatically times the

program pulse widths (Any page to be programed should have page in the erased state first)

• Status Register Feature

• Electronic Identification

- JEDEC 2-byte Device ID

- RES command, 1-byte Device ID

P/N:PM1239

REV. 1.7, AUG. 15, 2008

12 3 4 5 6 7...40

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