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MX1N5936BG PDF预览

MX1N5936BG

更新时间: 2024-11-19 19:12:55
品牌 Logo 应用领域
美高森美 - MICROSEMI 测试二极管
页数 文件大小 规格书
5页 350K
描述
Zener Diode, 30V V(Z), 5%, 1.5W, Silicon, Unidirectional, DO-204AL, HERMETIC SEALED, GLASS, DO-41, 2 PIN

MX1N5936BG 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:O-LALF-W2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.79
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JEDEC-95代码:DO-204ALJESD-30 代码:O-LALF-W2
JESD-609代码:e0元件数量:1
端子数量:2封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:1.5 W认证状态:Not Qualified
参考标准:MIL-19500标称参考电压:30 V
表面贴装:NO技术:ZENER
端子面层:TIN LEAD端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:5%工作测试电流:12.5 mA
Base Number Matches:1

MX1N5936BG 数据手册

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与MX1N5936BG相关器件

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MX1N5936BGTR MICROSEMI

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Zener Diode, 30V V(Z), 5%, 1.5W, Silicon, Unidirectional, DO-204AL, HERMETIC SEALED, GLASS
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Zener Diode, 30V V(Z), 10%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLA
MX1N5936BUR-1ATR MICROSEMI

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Zener Diode, 30V V(Z), 10%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLA
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