是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | DO-213AB |
包装说明: | O-LELF-R2 | 针数: | 2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.45 |
其他特性: | HIGH RELIABILITY | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | ZENER DIODE | JEDEC-95代码: | DO-213AB |
JESD-30 代码: | O-LELF-R2 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | GLASS | 封装形状: | ROUND |
封装形式: | LONG FORM | 峰值回流温度(摄氏度): | 260 |
极性: | UNIDIRECTIONAL | 最大功率耗散: | 1 W |
认证状态: | Not Qualified | 参考标准: | MIL-19500 |
标称参考电压: | 51 V | 表面贴装: | YES |
技术: | ZENER | 端子面层: | MATTE TIN |
端子形式: | WRAP AROUND | 端子位置: | END |
处于峰值回流温度下的最长时间: | 40 | 最大电压容差: | 1% |
工作测试电流: | 5 mA |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MX1N4757DUR-1TRE3 | MICROSEMI |
获取价格 |
Zener Diode, 51V V(Z), 1%, 1W, Silicon, Unidirectional, DO-213AB, ROHS COMPLIANT, HERMETIC | |
MX1N4757DURE3 | MICROSEMI |
获取价格 |
Zener Diode, 51V V(Z), 1%, 1W, Silicon, Unidirectional, DO-213AB, ROHS COMPLIANT, HERMETIC | |
MX1N4757DURE3TR | MICROSEMI |
获取价格 |
Zener Diode, 51V V(Z), 1%, 1W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLASS, | |
MX1N4757DURTR | MICROSEMI |
获取价格 |
Zener Diode, 51V V(Z), 1%, 1W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLASS, | |
MX1N4757G | MICROSEMI |
获取价格 |
Zener Diode, 51V V(Z), 10%, 1W, Silicon, Unidirectional, DO-204AL, HERMETIC SEALED, GLASS, | |
MX1N4757GE3 | MICROSEMI |
获取价格 |
Zener Diode, 51V V(Z), 10%, 1W, Silicon, Unidirectional, DO-204AL, ROHS COMPLIANT, HERMETI | |
MX1N4757GE3TR | MICROSEMI |
获取价格 |
Zener Diode, 51V V(Z), 10%, 1W, Silicon, Unidirectional, DO-204AL, ROHS COMPLIANT, HERMETI | |
MX1N4757GTR | MICROSEMI |
获取价格 |
Zener Diode, 51V V(Z), 10%, 1W, Silicon, Unidirectional, DO-204AL, HERMETIC SEALED, GLASS, | |
MX1N4757PE3 | MICROSEMI |
获取价格 |
Zener Diode, 51V V(Z), 10%, 1W, Silicon, Unidirectional, DO-204AL, ROHS COMPLIANT, PLASIC, | |
MX1N4757PE3TR | MICROSEMI |
获取价格 |
Zener Diode, 51V V(Z), 10%, 1W, Silicon, Unidirectional, DO-204AL, ROHS COMPLIANT, PLASIC, |