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MWIC930GNR1

更新时间： 2024-01-14 01:20:39
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 放大器射频微波功率放大器高功率电源
页数 文件大小 规格书
20页 545K
描述
RF LDMOS Wideband Integrated Power Amplifiers

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MWIC930GNR1 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：FLNG,.8''H SPACEReach Compliance Code：not_compliant
ECCN代码：5A991.GHTS代码：8542.33.00.01
风险等级：5.08Is Samacsys：N
特性阻抗：50 Ω构造：COMPONENT
增益：28 dBJESD-609代码：e3
功能数量：1最大工作频率：960 MHz
最小工作频率：746 MHz最高工作温度：115 °C
最低工作温度：-30 °C封装主体材料：PLASTIC/EPOXY
封装等效代码：FLNG,.8''H SPACE电源：27 V
射频/微波设备类型：WIDE BAND HIGH POWER子类别：RF/Microwave Amplifiers
技术：MOS端子面层：Matte Tin (Sn)
最大电压驻波比：5Base Number Matches：1

MWIC930GNR1 数据手册

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Document Number: MWIC930N  
Rev. 6, 5/2006  
Freescale Semiconductor  
Technical Data  
RF LDMOS Wideband Integrated  
Power Amplifiers  
The MWIC930N wideband integrated circuit is designed for CDMA and  
GSM/GSM EDGE applications. It uses Freescale’s newest High Voltage (26 to  
28 Volts) LDMOS IC technology and integrates a multi-stage structure. Its  
wideband On-Chip integral matching circuitry makes it usable from 790 to  
1000 MHz. The linearity performances cover all modulations for cellular  
applications: GSM, GSM EDGE, TDMA, N-CDMA and W-CDMA.  
MWIC930NR1  
MWIC930GNR1  
746-960 MHz, 30 W, 26-28 V  
SINGLE N-CDMA, GSM/GSM EDGE  
RF LDMOS WIDEBAND INTEGRATED  
POWER AMPLIFIERS  
Final Application  
• Typical Performance @ P1dB: VDD = 26 Volts, IDQ1 = 90 mA, IDQ2  
=
240 mA, Pout = 30 Watts P1dB, Full Frequency Band (921-960 MHz)  
Power Gain — 30 dB  
Power Added Efficiency — 45%  
Driver Application  
• Typical Single-Carrier N-CDMA Performance: VDD = 27 Volts, IDQ1  
90 mA, IDQ2 = 240 mA, Pout = 5 Watts Avg., Full Frequency Band  
(865-894 MHz), IS -95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13),  
Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01%  
Probability on CCDF.  
=
CASE 1329-09  
TO-272 WB-16  
PLASTIC  
Power Gain — 31 dB  
Power Added Efficiency — 21%  
ACPR @ 750 kHz Offset — -52 dBc in 30 kHz Bandwidth  
MWIC930NR1  
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 30 Watts CW Output  
Power  
Features  
• Characterized with Series Equivalent Large-Signal Impedance Parameters  
• On-Chip Matching (50 Ohm Input, DC Blocked, >4 Ohm Output)  
• Integrated Quiescent Current Temperature Compensation with  
Enable/Disable Function  
CASE 1329A-03  
TO-272 WB-16 GULL  
PLASTIC  
• On-Chip Current Mirror gm Reference FET for Self Biasing Application (1)  
• Integrated ESD Protection  
• 200°C Capable Plastic Package  
MWIC930GNR1  
• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.  
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.  
V
V
RD2  
GND  
V
1
2
3
4
5
GND  
NC  
16  
15  
RG2  
RD2  
V
RG2  
V
DS1  
V
DS1  
V
RD1  
RF  
V
out/  
RF  
6
14  
in  
DS2  
RF  
V
/RF  
DS2 out  
in  
V
RG1  
7
8
9
10  
V
V
GS1  
GS2  
NC  
V
RD1  
13  
12  
NC  
GND  
V
RG1  
GND  
11  
(Top View)  
V
GS1  
GS2  
Quiescent Current  
Temperature Compensation  
Note: Exposed backside flag is source  
terminal for transistors.  
V
Figure 1. Functional Block Diagram  
Figure 2. Pin Connections  
1. Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes - AN1987.  
© Freescale Semiconductor, Inc., 2006. All rights reserved.  
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