MW4IC915GMBR1

更新时间： 2024-02-17 13:13:01

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		放大器功率放大器
页数	文件大小	规格书
16页	334K
描述
RF LDMOS Wideband Integrated Power Amplifiers

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MW4IC915GMBR1 数据手册

MW4IC915

Rev. 5, 3/2005

Freescale Semiconductor

Technical Data

RF LDMOS Wideband Integrated

Power Amplifiers

The MW4IC915MB/GMB wideband integrated circuit is designed for GSM

and GSM EDGE base station applications. It uses Freescale’s newest High

Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi−stage

structure. Its wideband On−Chip design makes it usable from 750 to 1000 MHz.

The linearity performances cover all modulations for cellular applications: GSM,

GSM EDGE, TDMA, N−CDMA and W−CDMA.

MW4IC915NBR1

MW4IC915GNBR1

MW4IC915MBR1

MW4IC915GMBR1

860 − 960 MHz, 15 W, 26 V

GSM/GSM EDGE, N−CDMA

RF LDMOS WIDEBAND

Final Application

• Typical Performance: V_DD= 26 Volts, I_DQ1= 60 mA, I_DQ2= 240 mA,

P_out= 15 Watts CW, Full Frequency Band (860−960 MHz)

Power Gain — 30 dB

INTEGRATED POWER AMPLIFIERS

Power Added Efficiency — 44%

Driver Application

• Typical GSM/GSM EDGE Performances: V_DD= 26 Volts, I_DQ1= 60 mA,

I_DQ2= 240 mA, P_out= 3 Watts Avg., Full Frequency Band (869−894 MHz

and 921−960 MHz)

Power Gain — 31 dB

Power Added Efficiency — 19%

Spectral Regrowth @ 400 kHz Offset = −65 dBc

Spectral Regrowth @ 600 kHz Offset = −83 dBc

EVM — 1.5%

CASE 1329−09

TO−272 WB−16

PLASTIC

MW4IC915NBR1(MBR1)

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 15 Watts CW

Output Power

• Characterized with Series Equivalent Large−Signal Impedance Parameters

• On−Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)

• Integrated Quiescent Current Temperature Compensation with

Enable/Disable Function

• On−Chip Current Mirror g_mReference FET for Self Biasing Application⁽¹⁾

• Integrated ESD Protection

• N Suffix Indicates Lead−Free Terminations

• 200°C Capable Plastic Package

• Also Available in Gull Wing for Surface Mount

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

CASE 1329A−03

TO−272 WB−16 GULL

PLASTIC

MW4IC915GNBR1(GMBR1)

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(Top View)

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Note: Exposed backside flag is source

terminal for transistors.

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Figure 1. Functional Block Diagram

Figure 2. Pin Connections

1. Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes − AN1987.

MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...16

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与MW4IC915GMBR1相关器件

型号	品牌	描述	获取价格	数据表
MW4IC915GNBR1	MOTOROLA	RF LDMOS Wideband Integrated Power Amplifiers	获取价格
MW4IC915GNBR1	FREESCALE	RF LDMOS Wideband Integrated Power Amplifiers	获取价格
MW4IC915GNBR1_06	FREESCALE	RF LDMOS Wideband Integrated Power Amplifiers	获取价格
MW4IC915MBR1	FREESCALE	RF LDMOS Wideband Integrated Power Amplifiers	获取价格
MW4IC915MBR1	MOTOROLA	RF LDMOS Wideband Integrated Power Amplifiers	获取价格
MW4IC915NBR1	MOTOROLA	RF LDMOS Wideband Integrated Power Amplifiers	获取价格

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