Datasheet > MUZ33V

MUZ33V

更新时间： 2024-03-03 10:08:45

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
28页	2048K
描述
Zener Diodes

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中文翻译

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数据手册

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MUZ33V 数据手册

MUZ series

Zener Diode Silicon Epitaxial Planar

MUZ series

1. Applications

(1) Voltage surge protection

2. Features

(1) Small package

(2) The typical voltage of VZ is accorded to E24 series.

3. Packaging and Internal Circuit

1: Anode

2: N.C.

3: Cathode

USM

4. Absolute Maximum Ratings 1 (Note) (Unless otherwise specified, Ta = 25 �)

Characteristics

Symbol

Note

Rating

Unit

Power dissipation

(Note 1)

(Note 2)

150

600

Junction temperature

Storage temperature

150

�

Tstg

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on a glass epoxy circuit board of 25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 0.42 mm2 × 3

Note 2: Mounted on a glass epoxy circuit board of 25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 mm2

Start of commercial production

2020-07

Toshiba Electronic Devices & Storage Corporation

2023-11-30

Rev.3.0

12 3 4 5 6 7...28

中文翻译

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