MUZ Series
TOSHIBA Zener Diode Silicon Epitaxial Planar Type
MUZ Series
Applications
Voltage surge protection
Features
・Small package
・The typical voltage of V is accorded to E24 series
Z
Packaging and Internal Circuit
1: Anode
2: N.C.
3: Cathode
USM
Absolute Maximum Ratings 1 (Note) (Unless otherwise specified, Ta = 25°C)
Characteristics
Symbol
Rating
Unit
*1
Power dissipation
P
P
150
600
mW
mW
°C
D
D
*2
Junction temperature
Storage temperature
T
150
j
T
−55 to 150
°C
stg
Absolute Maximum Ratings 2 (Note) (Unless otherwise specified, Ta = 25°C)
*3
*3
Electrostatic discharge voltage
Electrostatic discharge voltage
Type No.
Peak pulse
Peak pulse
Type No.
Peak pulse
Peak pulse
*4
*4
*4
*4
Contact
Air
power
current
Contact
Air
power
current
V
(kV)
P
(W)
I
(A)
V
(kV)
P
(W)
I
(A)
PP
ESD
PK
PP
ESD
PK
MUZ5V6
MUZ6V2
MUZ6V8
MUZ8V2
MUZ12V
± 30
155
175
180
200
200
12
MUZ16V
MUZ20V
MUZ24V
MUZ30V
MUZ36V
± 30
200
200
200
200
200
5.5
± 30
± 30
± 30
± 30
11
10
8.5
7
± 30
± 30
± 20
± 12
5
4.5
4
3
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept
and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.).
2
*1:
*2:
*3:
*4:
Mounted on a glass epoxy circuit board of 25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 0.5 mm x 3
2
Mounted on a glass epoxy circuit board of 25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 mm
according to IEC61000-4-2
according to IEC61000-4-5, tp = 8 / 20 μs
Start of commercial production
2020-07
© 2020
Toshiba Electronic Devices & Storage Corporation
2020-10-26
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