Datasheet > MUZ12V

MUZ12V

更新时间： 2023-12-20 18:44:00

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
16页	2276K
描述
12 V Zener Diode, SOT-323(USM)

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中文翻译

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MUZ12V 数据手册

MUZ Series

TOSHIBA Zener Diode Silicon Epitaxial Planar Type

MUZ Series

Applications

Voltage surge protection

Features

・Small package

・The typical voltage of V is accorded to E24 series

Packaging and Internal Circuit

1: Anode

2: N.C.

3: Cathode

USM

Absolute Maximum Ratings 1 (Note) (Unless otherwise specified, Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Power dissipation

150

600

°C

Junction temperature

Storage temperature

150

−55 to 150

°C

stg

Absolute Maximum Ratings 2 (Note) (Unless otherwise specified, Ta = 25°C)

Electrostatic discharge voltage

Type No.

Peak pulse

Type No.

Peak pulse

Contact

Air

power

current

Contact

Air

power

current

(kV)

(W)

(A)

(kV)

(W)

(A)

ESD

MUZ5V6

MUZ6V2

MUZ6V8

MUZ8V2

MUZ12V

± 30

155

175

180

200

MUZ16V

MUZ20V

MUZ24V

MUZ30V

MUZ36V

± 30

200

5.5

± 30

8.5

± 30

± 20

± 12

4.5

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change

in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept

and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.).

*1:

*2:

*3:

*4:

Mounted on a glass epoxy circuit board of 25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 0.5 mm x 3

Mounted on a glass epoxy circuit board of 25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 mm

according to IEC61000-4-2

according to IEC61000-4-5, tp = 8 / 20 μs

Start of commercial production

2020-07

Toshiba Electronic Devices & Storage Corporation

2020-10-26

12 3 4 5 6 7...16

中文翻译

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