Datasheet > MURS220

MURS220

更新时间： 2024-11-09 14:52:35

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1509K
描述
SMBG

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中文翻译

获取价格

数据手册

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MURS220 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CCOO..,, LLTTDD

SMBG Plastic-Encapsulate Diodes

Super Fast Recovery Rectifier Diodes

MURS220 THRU MURS260

Features

SMBG

●I_F(AV)

●VRRM

200V-600V

●High surge current capability

●

Polarity: Color band denotes cathode

Applications

●Rectifier

Marking

●MURS2X0

X From 2 to 6

MURS2

Item

Symbol Unit

Test Conditions

V_RRM

200

400

280

2.0

600

Repetitive Peak Reverse Voltage

MaximumRMS Voltage

V_RMS

140

420

60Hz Half-sine wave，

Resistance load，T_a=120℃

I_F(AV)

I_FSM

Average Forward Current

60Hz Half-sine wave，

1 cycle，Ta=25℃

Surge(Non-repetitive)Forward

Current

Operation Junction and

Storage Temperature Range

T_J,T_STG

-55 ~ +150

Electrical Characteristics (T=25 Unless otherwise specified

MURS2

Test Condition

Symbol

Unit

Item

V_F

t_rr

I_F=2.0A

Peak Forward Voltage

1.45

1.25

0.95

Irr=0.25A

I_F=0.5A,I_R=1.0A

Reverse recovery time

I_RRM1

5.0

T =25

μA

_RM=V

RRM

Peak Reverse Current

I_RRM2

T =100

Between junction and ambient

Thermal

Resistance(Typical)

J-A

J-L

Between junction and terminal

Notes:

Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper

)

pad areas

www.jscj-elec.com

Rev. - 1.1

12 3 4

中文翻译

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