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MURHB840CT PDF预览

MURHB840CT

更新时间： 2023-12-06 20:01:09
品牌 Logo 应用领域
WON-TOP /
页数 文件大小 规格书
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MURHB840CT 数据手册

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®
MURHB820CT – MURHB860CT  
8.0A SURFACE MOUNT GLASS PASSIVATED DUAL SUPERFAST RECTIFIER  
WON-TOP ELECTRONICS  
Features  
Glass Passivated Die Construction  
C
Ideally Suited for Automatic Assembly  
Super-Fast Recovery Time  
High Voltage Capability  
Low Power Loss, High Efficiency  
High Surge Current Capability  
For Use in High Voltage, High Frequency  
Inverters, Free Wheeling, and Switching  
Power Supplies  
A
J
B
D
E
PIN 1  
2
3
G
H
K
P
P
D2 PAK/TO-263  
Mechanical Data  
Dim  
A
Min  
9.80  
9.60  
4.40  
8.50  
—
Max  
10.40  
10.60  
4.80  
9.10  
2.80  
1.40  
0.99  
1.40  
0.70  
2.75  
Case: D2PAK/TO-263, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
B
C
D
Polarity: See Diagram  
Weight: 1.7 grams (approx.)  
Mounting Position: Any  
Marking: Device Code, See Page 3  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
PIN 1  
PIN 3  
E
Case, PIN 2  
G
H
1.00  
—
J
1.20  
0.30  
2.35  
K
P
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
MURHB  
820CT  
MURHB  
830CT  
MURHB  
840CT  
MURHB  
860CT  
Characteristic  
Symbol  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
200  
140  
300  
210  
400  
280  
600  
420  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
V
A
Average Rectified Output Current  
@TC = 100°C  
Total Device  
Per Diode  
8.0  
4.0  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed  
on Rated Load (JEDEC Method)  
IFSM  
125  
A
Forward Voltage per diode  
@IF = 4.0A  
VFM  
IRM  
0.95  
1.3  
1.7  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TC = 25°C  
@TC = 100°C  
10  
500  
µA  
Reverse Recovery Time (Note 1)  
trr  
35  
85  
50  
50  
nS  
pF  
Typical Junction Capacitance (Note 2)  
CJ  
Thermal Resistance Junction to Ambient per diode  
Thermal Resistance Junction to Case per diode  
RθJA  
RθJC  
60  
3.0  
°C/W  
°C  
Operating and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
© Won-Top Electronics Co., Ltd.  
Revision: March, 2014  
www.wontop.com  
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