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MURF2060CTR PDF预览

MURF2060CTR

更新时间： 2024-09-09 12:56:43
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
2页 610K
描述
20.0 Ampere Insulated Common Anode Ultra Fast Recovery Diodes

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MURF2060CTR 数据手册

 浏览型号MURF2060CTR的Datasheet PDF文件第2页 
MURF2020CTR thru MURF2060CTR  
®
MURF2020CTR thru MURF2060CTR  
Pb Free Plating Product  
20.0 Ampere Insulated Common Anode Ultra Fast Recovery Diodes  
Unit : inch (mm)  
ITO-220AB  
Features  
.189(4.8)  
.406(10.3)  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Fast switching for high efficiency  
.165(4.2)  
.381(9.7)  
.134(3.4)  
.118(3.0)  
Low forward voltage drop  
High current capability  
Low reverse leakage current  
High surge current capability  
.130(3.3)  
.114(2.9)  
Application  
Automotive Inverters/Solar Inverters  
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS and UPS  
.114(2.9)  
.098(2.5)  
.071(1.8)  
.055(1.4)  
Car Audio Amplifiers and Sound Device Systems  
.055(1.4)  
.039(1.0)  
.035(0.9)  
.011(0.3)  
.032(.8)  
MAX  
Mechanical Data  
.1  
(2.55)  
.1  
(2.55)  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Case: Insulated/Isolated ITO-220AB  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
Polarity: As marked on diode body  
Mounting position: Any  
method 208  
Case  
Case  
Case  
Doubler  
Negative  
Common Anode  
Suffix "CTR"  
Positive  
Tandem Polarity  
Suffix "CTD"  
Weight: 2.2 gram approximately  
Common Cathode  
Suffix "CT"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
o
Rating at 25  
C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
MURF2020CT MURF2040CT MURF2060CT  
MURF2020CTR MURF2040CTR MURF2060CTR  
MURF2020CTD MURF2040CTD MURF2060CTD  
UNIT  
SYMBOL  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
Current TC=125oC  
20.0  
A
A
V
IF(AV)  
Peak Forward Surge Current, 8.3ms single  
Half sine-wave superimposed on rated load  
(JEDEC method)  
IFSM  
200  
175  
Maximum Instantaneous Forward Voltage  
@ 10.0 A  
VF  
IR  
0.98  
1.3  
1.7  
Maximum DC Reverse Current @TJ=25oC  
At Rated DC Blocking Voltage @TJ=125oC  
uA  
uA  
nS  
10.0  
250  
Maximum Reverse Recovery Time (Note 1)  
Typical junction Capacitance (Note 2)  
Trr  
CJ  
35  
pF  
oC  
120  
70  
Operating Junction and Storage  
Temperature Range  
-55 to +150  
T
J
, TSTG  
NOTES : (1) Reverse recovery test conditions I  
F
= 0.5A, I  
R
= 1.0A, Irr = 0.25A.  
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
Page 1/2  
http://www.thinkisemi.com/  
Rev.04/2014  
© 2006 Thinki Semiconductor Co.,Ltd.  
12

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