Datasheet > MURD10H60

MURD10H60

更新时间： 2024-09-29 14:55:59

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
6页	1498K
描述
TO-252-2L

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中文翻译

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数据手册

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MURD10H60 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-252-2L Plastic-Encapsulate Diode

HYPERFAST RECTIFIER,FRED

MURD10H60

MAIN CHARACTERISTICS

TO-252-2L

I_O

V_RRM

T_rr

10A

600V

1. NO CONNECTION

2. CATHODE

24ns

T_j

175℃

3. ANODE

V_F(typ)

1.02V(@T_j=150℃)

FEATURES

case



Ultrafast Recovery Times and Low Recovery Loss

Low Forward Voltage

Low Reverse Leakage Current

APPLICATIONS

Specifically designed to improve efficiency of PFC and output rectification stages of EV / HEV battery

charging stations, booster stage of solar inverters and UPS applications, these devices are perfectly

matched to operate with MOSFETs or high speed IGBTs.

MARKING

MURD10H60 = Device code

Solid dot = Green molding compound device

if none, the normal device

XXXX = Code

MUR

D10H60

XXXX

MAXIMUM RATINGS ( T_C=25℃ unless otherwise noted )

Symbol

Parameter

MURD10H60

Unit

V_RRM

V_R

Peak Repetitive Reverse Voltage

DC Blocking Voltage

600

I_F(AV)

I_F(RMS)

I_FSM

P_D

Average Forward Current(T_C=150℃)

RMS Forward Current(T_C=150℃)

Non-Repetitive Surge Forward Current (8.3ms）

Power dissipation

144

100

R_ΘJC

T_j

Thermal Resistance From Junction to Case

Operating Junction Temperature Range

Storage Temperature Range

1.5

℃/W

℃

-55 ~ +175

T_stg

℃

www.jscj-elec.com

Rev . - 1.1

12 3 4 5 6

中文翻译

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