SENSITRON
MURC405-MURC460
SEMICONDUCTOR
Technical Data
Data Sheet 4855, Rev.-
MURC405-MURC460
Ultrafast Silicon Die
Applications:
• Switching Power Supply • General Purpose • Free-Wheeling Diodes • Polarity Protection
Diode
Features:
•
Glass-Passivated
Epitaxial Construction.
Low Reverse Leakage Current
High Surge Current Capability
Low Forward Voltage Drop
Fast Reverse-Recovery Behavior
•
•
•
•
•
Maximum Ratings:
Characteristics
Symbol MURC MURC MURC MURC MURC MURC Unit
405
410
415
420
440
460
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
150
200
400
600
V
Average Rectified Forward
Current(Square Wave)
IF(AV)
A
A
4.0 @ TA = 80°C
4.0 @ TA = 40°C
Non-Repetitive Peak Surge Current
(Surge applied at rated load conditions, half
wave, single phase, 60Hz)
IFSM
125
110
Max. Junction Capacitance @VR = 5V,
TC = 25 °C, fSIG = 1MHz, VSIG = 50mV (p-p)
Operating JunctionTemperature and Storage
Temperature
CT
100
40
pF
TJ, Tstg
-65 to +175
°C
Electrical Characteristics:
Characteristics
Symbol MURC MURC MURC MURC MURC MURC Unit
405 410 415 420 440 460
Max. Instantaneous Forward Voltage (Note1)
(IF = 3.0 Amp, TJ = 150 °C)
(IF = 3.0 Amp, TJ = 25 °C)
VF
V
0.71
0.88
0.89
1.05
1.25
1.28
(IF = 4.0 Amp, TJ = 25 °C)
Max. Instantaneous Reverse Current (Note1)
(Rated DC Voltage, TJ = 150 °C)
(Rated DC Voltage, TJ = 25 °C)
Max. Reverse Recovery Time
(IF = 1.0 Amp, di/dt = 50 A/µs)
(IF = 0.5 Amp, IR = 1.0 A, IREC=0.25A)
Max. Forward Recovery Time
(IF = 1.0 Amp, di/dt = 100 A/µs,
Recover to 1.0 V)
IR
µA
150
5
250
10
nS
trr
35
25
25
75
50
50
nS
Tfr
1. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%
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