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MUR610CT-BP PDF预览

MUR610CT-BP

更新时间: 2024-11-19 19:47:15
品牌 Logo 应用领域
美微科 - MCC 局域网功效二极管
页数 文件大小 规格书
3页 663K
描述
Rectifier Diode, 1 Phase, 2 Element, 6A, 100V V(RRM), Silicon, TO-220AB, TO-220AB, 3 PIN

MUR610CT-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:TO-220AB, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.53
应用:EFFICIENCY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
最大非重复峰值正向电流:60 A元件数量:2
相数:1端子数量:3
最大输出电流:6 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:100 V最大反向恢复时间:0.035 µs
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MUR610CT-BP 数据手册

 浏览型号MUR610CT-BP的Datasheet PDF文件第2页浏览型号MUR610CT-BP的Datasheet PDF文件第3页 
M C C  
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20731 Marilla Street Chatsworth  
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TM  
MUR605CT  
THRU  
Micro Commercial Components  
MUR660CT  
Features  
Glass passivated junction  
Superfast recovery time for hight efficiency  
Low profile package  
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates  
6 Amp S uper Fast  
GlassPassivated  
Rectifier  
RoHS Compliant. See ordering information)  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0 and MSL Rating 1  
50 to 600 Volts  
Maximum Ratings  
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
TO-220AB  
C
B
MCC  
Device  
Maximum  
Recurrent  
Peak  
Maximum Maximum  
S
F
Catalog  
Number  
Marking  
RMS  
Voltage  
DC  
Blocking  
Voltage  
Q
Reverse  
Voltage  
50V  
100V  
200V  
T
A
MUR605CT MUR605CT  
MUR610CT MUR610CT  
MUR620CT MUR620CT  
MUR640CT MUR640CT  
MUR660CT MUR660CT  
35V  
70V  
140V  
280V  
420V  
50V  
100V  
200V  
400V  
600V  
U
1
2
3
400V  
600V  
H
K
V
L
J
Electrical Characteristics @ 25°C Unless Otherwise Specified  
D
R
PIN 2  
Average Forward  
Current  
IF(AV)  
6 A  
TA = 75°C  
G
N
PIN 1  
PIN 3  
Peak Forward Surge  
Current  
IFSM  
60A  
8.3ms, half sine  
CASE  
Maximum Forward  
Voltage Drop Per  
DIMENSIONS  
MIN  
MAX  
0.975V  
1.3V  
1.7 V  
INCHES  
MM  
VF  
IFM = 3 A per  
element;  
TA = 25°C*  
MAX  
15.88  
10.67  
NOTE  
605CT-620CT  
DIM  
A
MIN  
.560  
Element  
.625  
.420  
.190  
14.22  
9.65  
3.56  
640CT  
660CT  
B
C
.380  
.140  
4.82  
Maximum DC  
D
F
.020  
.139  
.190  
---  
.045  
.161  
.110  
.250  
.025  
0.51  
3.53  
2.29  
---  
1.14  
4.09  
2.79  
6.35  
0.64  
Reverse Current At  
Rated DC Blocking  
Voltage  
IR  
5.0uA TA = 25°C  
50uA  
G
H
J
TA = 100°C  
.012  
0.30  
K
L
.500  
.045  
.580  
.060  
12.70  
1.14  
14.73  
1.52  
Maximum Reverse  
Recovery Time  
Trr  
IF=0.5A,  
Irr=0.25A  
IR=1.0A  
N
.190  
.210  
4.83  
5.33  
Q
R
S
T
U
V
.100  
.080  
.045  
.230  
-----  
.135  
.115  
.055  
.270  
.050  
-----  
2.54  
2.04  
1.14  
5.84  
-----  
3.43  
2.92  
1.39  
6.86  
1.27  
-----  
605CT- 620CT  
35ns  
60ns  
75ns  
640CT  
660CT  
*Pulse test: Pulse width 300 msec, Duty cycle 2%  
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.  
.045  
1.15  
www.mccsemi.com  
1 of 3  
Revision: 6  
2008/01/01  

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