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MUR605CT
THRU
MUR660CT
Features
·
Glass passivated chip
·
·
·
Superfast switching time for hight efficiency
Low reverse leakage current
High surge capacity
6 Amp Super Fast
Glass Passivated
Rectifier
50 to 600 Volts
Maximum Ratings
·
·
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
TO-220AB
Microsemi
Catalog
Device
Marking
Maximum
Recurrent
Peak
Maximum Maximum
C
B
RMS
Voltage
DC
Blocking
Voltage
S
F
Number
Reverse
Voltage
50V
100V
200V
4
Q
T
MUR605CT MUR605CT
MUR610CT MUR610CT
MUR620CT MUR620CT
MUR640CT MUR640CT
MUR660CT MUR660CT
35V
70V
140V
280V
420V
50V
100V
200V
400V
600V
A
U
1
2
3
400V
600V
H
PIN 1.
PIN 2.
PIN 3.
PIN 4.
ANODE
CATHODE
ANODE
K
CATHODE
Electrical Characteristics @ 25°C Unless Otherwise Specified
V
D
L
J
Average Forward
Current
IF(AV)
6 A
TC = 130°C
R
G
Peak Forward Surge
Current
IFSM
75A
8.3ms, half sine
N
Maximum Forward
Voltage Drop Per
Element
VF
IFM = 3 A per
element;
TA = 25°C*
ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ
605CT-620CT
ꢇ ꢇ ꢇ ꢇ
.975V
1.25 V
INCHES
ꢂꢁꢄ
MM
ꢀꢁꢂ
A
B
C
D
F
ꢂꢈꢉ
ꢂꢁꢄ
14.48
9.66
ꢂꢈꢉ
15.75
10.28
4.82
ꢄꢆꢊꢃ
640CT- 660CT
.570
.380
.160
.025
.142
.620
.405
.190
Maximum DC
4.06
Reverse Current At
Rated DC Blocking
Voltage
IR
5.0uA TJ = 25°C
.035
.147
0.64
3.61
0.89
3.73
2.66
3.93
50uA
TJ = 100°C
G
H
.095
.110
.105
.155
2.42
2.80
J
K
L
Q
R
S
.018
.500
.045
.100
.080
.045
.025
.562
.060
.120
.110
.055
0.46
12.70
1.14
2.54
2.04
1.14
0.64
14.27
1.52
3.04
2.79
1.39
Maximum Reverse
Recovery Time
Trr
IF=8.0A,
Irr=0.25A
605CT- 620
35ns
60ns
75ns
640CT
T
U
.235
------
.255
.050
5.97
-----
6.48
1.27
660CT
V
.045
------
1.15
-------
*Pulse test: Pulse width 300 msec, Duty cycle 1%
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