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MUR6060PTH PDF预览

MUR6060PTH

更新时间: 2024-11-24 14:54:51
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
3页 941K
描述
Bulk : 360pcs/Box, 1.8K/Ctn;

MUR6060PTH 数据手册

 浏览型号MUR6060PTH的Datasheet PDF文件第2页浏览型号MUR6060PTH的Datasheet PDF文件第3页 
MUR6060PTH  
Features  
Super Fast Switching For High Efficiency  
High Junction Temperature Capability  
Low Reverse Leakage  
High Forward Surge Current Caability  
Epoxy Meets UL 94 V-0 Flammability Rating  
Moisture Sensitivity Level 1  
Halogen Free Available Upon Request By Adding Suffix "-HF"  
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix Designates  
Compliant. See Ordering Information)  
60 Amp  
Super Fast  
Recovery Rectifier  
600 Volts  
Planar Structure Die and Soft Recovery Characteristics  
Maximum Ratings  
Operating Junction Temperature Range: -55⁰C to +175⁰C  
Storage Temperature Range: -55⁰C to +175⁰C  
TO-247  
Typical Thermal Resistance: 1°C/W Junction to Case  
Typical Thermal Resistance: 50°C/W Junction to Ambient  
C
E
B
Maximum  
Maximum DC  
Blocking  
MCC  
Device  
Recurrent  
Maximum  
Part Number  
Marking  
Peak Reverse RMS Voltage  
Voltage  
Voltage  
A
MUR6060PTH MUR6060PTH  
600V  
420V  
600V  
PIN  
2
Q
Electrical Characteristics @ 25°C Unless Otherwise Specified  
3
1
Average Rectified  
Forward Current  
TC=80⁰C  
IF(AV)  
IFSM  
VF  
60A  
P
Peak Forward Surge  
Current  
F
300A  
8.3ms,Half Sine  
K
V
J
IFM=30A;TJ=25⁰C  
IFM=30A;TJ=25⁰C  
IFM=30A ;TJ=150⁰C  
1.45V(Typ.)  
1.60V(Max.)  
1.45V(Max.)  
Instantaneous  
Forward Voltage  
D
G
Reverse Current At  
Rated DC Blocking  
Voltage  
TJ=25⁰C  
5μA(Max.)  
IR  
TJ=150⁰C  
200uA(Max.)  
DIMENSIONS  
INCHES MM  
MIN MAX MIN MAX  
TP=40uS,L=15mH,  
TJ=25⁰C  
Avalanche Energy  
385mJ  
EAS  
DIM  
NOTE  
A
B
C
D
E
F
0.787 0.866 20.00 22.00  
0.598 0.638 15.20 16.20  
0.185 0.208 4.70 5.30  
0.035 0.059 0.90 1.50  
0.059 0.094 1.50 2.40  
0.067 0.091 1.70 2.30  
0.019 0.031 0.48 0.80  
0.748 0.833 19.00 21.15  
0.122 0.189 3.10 4.80  
0.118 0.150 3.00 3.80  
0.106 0.134 2.70 3.40  
0.197 0.224 5.00 5.70  
38ns(Typ.)  
50ns(Max.)  
IF=0.5A; IR=1.0A;  
IRR=0.25A  
Reverse Recovery  
Time  
trr  
TJ=25⁰C  
112ns(Typ.)  
175ns(Typ.)  
TJ=125⁰C  
IF=30A  
J
TJ=25⁰C  
5.5A(Typ.)  
13A(Typ.)  
Peak recovery  
current  
diF/dt=200A/μs  
K
P
Q
V
G
IRRM  
TJ=125⁰C  
VR=200 V  
Φ
TJ=25⁰C  
300nC(Typ.)  
Reverse recovery  
charge  
Qrr  
TJ=125⁰C  
1150nC(Typ.)  
Note:1. High Temperature Solder Exemptions Applied, See EU Directive Annex 7a.  
Internal Structure  
PIN 1  
PIN 2  
CASE  
PIN 3  
Rev.3-1-01012022  
1/3  
MCCSEMI.COM  

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