Datasheet > MUR6060B

MUR6060B

更新时间： 2024-09-22 14:53:23

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
3页	1808K
描述
Bulk: 360pcs/Box;

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中文翻译

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数据手册

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MUR6060B 数据手册

MUR6060B

Features

• Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix Designates

Compliant. See Ordering Information)

60 Amp

• Halogen Free Available Upon Request By Adding Suffix "-HF"

• High Frequency Operation

• High Surge Forward Current Capability

• Epoxy Meets UL 94 V-0 Flammability Rating

• Planar Structure Die and Soft Recovery Characteristics

Ultra Fast

Recovery Rectifier

600 Volts

Maximum Ratings

• Operating Junction Temperature Range: -55⁰C to +175⁰C

• Storage Temperature Range: -55⁰C to +175⁰C

• Maximum Thermal Resistance: 0.8 °C/W Junction to Case

TO-247AD

Maximum

Maximum DC

Maximum

RMS

Voltage

MCC

Device

Recurrent

Peak Reverse

Voltage

Blocking

Voltage

Part Number

Marking

MUR6060B

600V

420V

600V

Electrical Characteristics @ 25°C Unless Otherwise Specifie

Average Rectified

Forward Current

T_C=95⁰C

I_F(AV)

I_FSM

V_F

60A

Peak Forward Surge

Current

600A

8.3ms,Half Sine

1.7V(Max.)

1.43V(Typ.)

Instantaneous

Forward Voltage

T_J=25⁰C

I_F=60A;

Maximum Reverse

Current At Rated DC

Blocking Voltage

10μA

T_J=25⁰C;

I_R

T_J=125⁰C

500μA

INCHES

Measured at

1.0MHz, V_R=4V

Typical Junction

Capacitance

DIM

NOTE

C_J

415pF

MIN MAX MIN MAX

0.602 0.642 15.30 16.30

0.799 0.839 20.30 21.30

0.189 0.205 4.80 5.20

Dynamic Recovery Characteristics @ 25°C Unless Otherwise Specified

0.242

6.15

BSC.

58ns(Typ.)

I_F=0.5A; I_R=1.0A;

I_RR=0.25A

0.091 0.106 2.30 2.70

0.772 0.796 19.62 20.22

----- 0.169 ----- 4.30

75ns(Max.)

Reverse Recovery

Time

t_rr

T_J=25⁰C

80ns(Typ.)

0.428

10.88

T_J=125⁰C

175ns(Typ.)

0.075 0.087 1.91 2.21

0.044 0.054 1.11 1.36

0.189 0.205 4.80 5.20

0.073 0.085 1.85 2.15

0.087 0.103 2.21 2.61

0.020 0.030 0.51 0.75

0.512 0.535 13.00 13.60

0.640 0.663 16.25 16.85

0.134 0.150 3.40 3.80

----- 0.287 ----- 7.30

I_F= 40 A

T_J=25⁰C

7.0A(Typ.)

Peak recovery

current

di_F/dt = 200 A/μs

V_R= 200 V

I_RRM

T_J=125⁰C

17A(Typ.)

T_J=25⁰C

280nC(Typ.)

Reverse recovery

charge

Q_rr

T_J=125⁰C

1500nC(Typ.)

Note:1. High Temperature Solder Exemptions Applied, See EU Directive Annex 7a.

Internal Structure

PIN 1

CASE

PIN 2

Rev.3-5-11112020

1/3

MCCSEMI.COM

12 3

中文翻译

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