Datasheet > MUR430

MUR430

更新时间： 2024-11-11 14:50:51

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	3559K
描述
DO-27

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中文翻译

获取价格

数据手册

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MUR430 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

DO-27 Plastic-Encapsulate Diodes

MUR405 THRU MUR4100

Features

Super Fast Recovery Rectifier Diodes

DO-27

● I_F(AV)

4.0A

● VRRM

50V~1000V

● High surge current capability

●

Polarity: Color band denotes cathode

Applications

● Rectifier

Marking

● MUR4XX

XX：From 05 To 100

Limiting Values(Absolute Maximum Rating)

MUR MUR MUR MUR MUR MUR MUR MUR

405 410 420 430 440 460 480 4100

Item

Symbol Unit

Test Conditions

V_RRM

Repetitive Peak Reverse Voltage

MaximumRMS Voltage

50 100 200 300 400 600 800 1000

35 70 140 210 280 420 560 700

V_RMS

V_DC

I_F(AV)

Maximum DC Blocking Voltage

100

200 300

400 600 800 1000

60Hz Half-sine wave，

Resistance load，T L=55℃

Average Forward Current

4.0

60Hz Half-sine wave，

1 cycle，Ta=25℃

Surge(Non-repetitive)Forward

Current

125

I_FSM

-55 ~ +150

Junction Temperature

Storage Temperature

T_J

℃

T_STG

Electrical Characteristics (T=25℃ Unless otherwise specified）

MUR MUR MUR MUR MUR MUR MUR MUR

405 410 420 430 440 460 480 4100

Symbol Unit

Test Condition

Item

V_FM

I_FM=4.0A

0.95

1.30

1.7

Maximum Peak Forward Voltage

I_RRM1

T =25℃

Maximum Peak Reverse Current

V_RM=V_RRM

μA

T =125℃

I_RRM2

I_F=0.5A,I_R=1.0A,I_rr=0.25A

Reverse Recovery time

Measured at 1MHz and applied

reverse voltage of 4.0V D.C.

C_J

Typical junction capacitance

Between junction and ambient

R_θ

J-A

℃/

Typical Thermal Resistance

R_θ

Between junction and lead

J-L

Notes:

Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

www.jscj-elec.com

Rev. - 1.0

12 3 4

中文翻译

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