Datasheet > MUR3060PS

MUR3060PS

更新时间： 2022-10-12 16:12:48

品牌	Logo	应用领域
THINKISEMI		/
页数	文件大小	规格书
3页	1043K
描述
30.0 Ampere Heatsink Dual Series Connection Ultra Fast Recovery Half Bridge Rectifiers

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数据手册

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MUR3060PS 数据手册

MUR3020PS thru MUR3060PS

MUR3020PS/MUR3040PS/MUR3060PS

Pb Free Plating Product

30.0 Ampere Heatsink Dual Series Connection Ultra Fast Recovery Half Bridge Rectifiers

TO-3PN

Features

ꢀ

Fast switching for high efficiency

Low forward voltage drop

High current capability

Bottom Side Metal Heat Sink

Low reverse leakage current

High surge current capability

Application

Automotive Inverters and Solar Inverters

ꢀ

Plating Power Supply,Motor Control,SMPS and UPS

Car Audio Amplifiers and Sound Device Systems

Mechanical Data

ꢀ

Case: Heatsink TO-3PN open metal package

Epoxy: UL 94V-0 rate flame retardant

Terminals: Solderable per MIL-STD-202

method 208

Case

Series

ꢀ

Polarity: As marked on diode body

Mounting position: Any

Weight: 0.65 gram approximately

Doubler

Common Cathode Common Anode Tandem Polarity Tandem Polarity

Suffix "PS"

Negative

Positive

Suffix "PT"

Suffix "PA"

Suffix "PD"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25

C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

UNIT

SYMBOL

MUR3020PS MUR3040PS MUR3060PS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

200

140

200

400

280

400

600

420

600

Maximum DC Blocking Voltage

Maximum Average Forward Rectified

30.0

300

1.3

IF(AV)

(Total Device 2x15A=30A)

Current TC=125 C

Peak Forward Surge Current, 8.3ms single

Half sine-wave superimposed on rated load

(JEDEC method)

IFSM

Maximum Instantaneous Forward Voltage

0.98

1.7

@ 15.0 A(Per Diode/Per Leg)

Maximum DC Reverse Current @TJ=25^oC

At Rated DC Blocking Voltage @TJ=125^oC

500

Maximum Reverse Recovery Time (Note 1)

Typical junction Capacitance (Note 2)

Trr

35-50

150

^oC

Operating Junction and Storage

Temperature Range

J, TSTG

-55 to +150

= 0.5A I = 1 0A Irr = 0.25A.

F R

NOTES : (1) Reverse recovery test conditions I

(2) Thermal Resistance junction to terminal.

(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

Page 1/3

http://www.thinkisemi.com.tw/

Rev.08T

12 3

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